Journal of Semiconductors, Volume. 40, Issue 5, 052201(2019)
Photoluminescence properties of ultrathin CsPbCl3 nanowires on mica substrate
Fig. 1. (Color online) The structure and morphology characterization of ultrathin CsPbCl3 nanowires (NWs) epitaxial on mica. (a) Scanning electron microscopy (SEM) image of the ultrathin CsPbCl3 NWs grown on (001)-mica by chemical vapor deposition method. (b) Atomic force microscopy (AFM) image of the CsPbCl3 NWs, scale bar: 100 nm. (c) Corresponding data of CsPbCl3 NWs height extracted from (b). (d) X-ray diffraction pattern of the CsPbCl3 NWs on mica (red line) and mica (black line).
Fig. 2. (Color online) Photoluminescence (PL) emission spectra of thin (height: ~ 7 nm; upper panel) and thick (height: ~ 8
Fig. 3. (Color online) (a) Power-dependent emission spectra of thin CsPbCl3 NWs on mica at 294 K with
Fig. 4. (Color online) (a) Temperature-dependent PL spectra of CsPbCl3 NWs on mica in the range of 294 − 78 K. The red and blue dot lines are the fitting curves of the FX and X-band by Lorentzian function, respectively. Scatters: experimental data point;
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Yan Gao, Liyun Zhao, Qiuyu Shang, Chun Li, Zhen Liu, Qi Li, Xina Wang, Qing Zhang. Photoluminescence properties of ultrathin CsPbCl3 nanowires on mica substrate[J]. Journal of Semiconductors, 2019, 40(5): 052201
Category: Articles
Received: Mar. 10, 2019
Accepted: --
Published Online: Sep. 18, 2021
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