High Power Laser and Particle Beams, Volume. 35, Issue 8, 085002(2023)

Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator

Jinbo Jiang1,2, Rui Chen1, Qing Zhao3, Ke Ma3, Yandong Yao1, and Guifeng Chen1
Author Affiliations
  • 1College of Engineering and New Energy, China Three Gorges University, Yichang 443002, China
  • 2Hubei Provincial Engineering Research Center for Power Transmission Line, Yichang 443002, China
  • 3State Grid Yichang Power Supply Company, Yichang 443002, China
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    Figures & Tables(16)
    Drive circuit schematic diagram
    TL494 chip control circuit
    Simulated driving waveforms at different DC supply
    Driving current waveforms at corresponding time
    Driving waveforms at different DC supply
    Resonant current and IGBT driving waveforms at corresponding time
    10-way SiC MOSFET driving waveforms at 0.9 μF/11 μH
    10-way SiC MOSFET driving waveforms at 10 μF/1 μH
    Driving waveforms at different pulse widths
    Driving waveforms at different frequencies
    10-way SiC MOSFET drive circuit experimental platform
    Voltage waveforms of 10 kV pulses at different frequencies
    Waveforms of 10 kV output voltage with different pulse widths
    Different output voltage waveforms at pulse width of 5 μs
    • Table 1. Comparison of the properties of four different magnetic materials

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      Table 1. Comparison of the properties of four different magnetic materials

      materialinitial permeability/(H·m−1) saturation flux density/Telectrical resistivity/(μΩ·cm)coercive force/(A·m−1)
      Mn-Zn ferrite3×1030.55×1078.0
      cobalt-based amorphous1×1050.581400.4
      iron-based amorphous5×1031.561302.4
      iron-based nanocrystals8×1041.251151.2
    • Table 2. Characteristic parameters of SiC MOSFET

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      Table 2. Characteristic parameters of SiC MOSFET

      drain-source voltage/Vdrain current/Ainput capacitance/pFresistive switching time/nson-time resistance/mΩ
      170072367265(turn-on delay) 20(rise time) 70
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    Jinbo Jiang, Rui Chen, Qing Zhao, Ke Ma, Yandong Yao, Guifeng Chen. Synchronous characteristics of SiC MOSFET driven by pulse transformer for Marx generator[J]. High Power Laser and Particle Beams, 2023, 35(8): 085002

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    Paper Information

    Category: Pulsed Power Technology

    Received: Apr. 27, 2023

    Accepted: Jun. 6, 2023

    Published Online: Aug. 16, 2023

    The Author Email:

    DOI:10.11884/HPLPB202335.230108

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