Laser & Infrared, Volume. 55, Issue 7, 1059(2025)

Effect of CdTe passivation layer quality on interface electrical characteristics of HgCdTe

WANG Jiao, DAI Yong-xi, LI Hao-ran, LIU Shi-guang, LIU Xing-xin, FAN Ye-xia, and WU Qing
Author Affiliations
  • The 11th Research Institute of CETC, Beijing 100015, China
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    References(5)

    [1] [1] Bhan R K, Dhar V. Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization[J]. Opto-Electronics Review, 2019, 27(2): 174-193.

    [5] [5] Reese M O, Perkins C L, Burst J M, et al. Intrinsic surface passivation of CdTe[J]. Journal of Applied Physics, 2015, 118(15): 155305.

    [7] [7] Sizov F, Vuichyk M, Svezhentsova K, et al. CdTe thin films as protective surface passivation to HgCdTe layers for the IR and THz detectors[J]. Materials Science in Semiconductor Processing, 2021, 124: 105577.

    [10] [10] Cui A L, Sun C H, Wang F, et al. Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe[J]. Infrared Physics & Technology, 2021, 114: 103667.

    [13] [13] Chen J, Chen J, Li X, et al. High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared[J]. npj Quantum Materials, 2021, 6: 103.

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    WANG Jiao, DAI Yong-xi, LI Hao-ran, LIU Shi-guang, LIU Xing-xin, FAN Ye-xia, WU Qing. Effect of CdTe passivation layer quality on interface electrical characteristics of HgCdTe[J]. Laser & Infrared, 2025, 55(7): 1059

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    Paper Information

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    Received: Sep. 10, 2024

    Accepted: Sep. 12, 2025

    Published Online: Sep. 12, 2025

    The Author Email:

    DOI:10.3969/j.issn.1001-5078.2025.07.009

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