Laser & Infrared, Volume. 55, Issue 7, 1059(2025)
Effect of CdTe passivation layer quality on interface electrical characteristics of HgCdTe
[1] [1] Bhan R K, Dhar V. Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization[J]. Opto-Electronics Review, 2019, 27(2): 174-193.
[5] [5] Reese M O, Perkins C L, Burst J M, et al. Intrinsic surface passivation of CdTe[J]. Journal of Applied Physics, 2015, 118(15): 155305.
[7] [7] Sizov F, Vuichyk M, Svezhentsova K, et al. CdTe thin films as protective surface passivation to HgCdTe layers for the IR and THz detectors[J]. Materials Science in Semiconductor Processing, 2021, 124: 105577.
[10] [10] Cui A L, Sun C H, Wang F, et al. Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe[J]. Infrared Physics & Technology, 2021, 114: 103667.
[13] [13] Chen J, Chen J, Li X, et al. High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared[J]. npj Quantum Materials, 2021, 6: 103.
Get Citation
Copy Citation Text
WANG Jiao, DAI Yong-xi, LI Hao-ran, LIU Shi-guang, LIU Xing-xin, FAN Ye-xia, WU Qing. Effect of CdTe passivation layer quality on interface electrical characteristics of HgCdTe[J]. Laser & Infrared, 2025, 55(7): 1059
Category:
Received: Sep. 10, 2024
Accepted: Sep. 12, 2025
Published Online: Sep. 12, 2025
The Author Email: