Piezoelectrics & Acoustooptics, Volume. 46, Issue 2, 154(2024)
Design and Preparation of High-Q XBARs
With the adventof the fifth generation(5G) mobile communication era, there is an urgent demand for high-frequency and large-bandwidth acoustic resonators for RF front-end filtering and signal processing. The laterally excited bulk wave resonator (XBAR) has garnered significant attention from researchers due to its ultra-high operating frequency and substantial electromechanical coupling coefficient(k2). However, XBARs suffer from alow quality factor (Q), impeding their application in RF front-ends. This paper proposes XBARs based on ZY-cut lithium niobate (LiNbO3). Resonator designs were optimized using the finite element method, and resonators were fabricated using micro-electro-mechanical systems. The resulting XBAR exhibiteda resonant frequency of 4.72 GHz, k2 value of 26.9%, Q3 dB value of 384, and temperature coefficient of frequency of -60.5×10-6/℃ for the A1 mode, along with a resonant frequency of 13.5 GHzand k2 value of 4.4% for the A3 mode.
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ZHANG Shuai, YU Zhenyi, GUO Yu, SUN Zongqin, FU Sulei, XU Zhibin, WANG Weibiao. Design and Preparation of High-Q XBARs[J]. Piezoelectrics & Acoustooptics, 2024, 46(2): 154
Received: Dec. 11, 2023
Accepted: --
Published Online: Aug. 29, 2024
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