Chinese Journal of Lasers, Volume. 31, Issue s1, 381(2004)

Development of Research on Large-Sized Ti:Sapphire Laser Crystals

SI Ji-Uang*, XU Jun, ZHAO Guang-jun, ZHOU Guo-qing, LI Hong-jun, WANG Jing-ya, and DENG Pei-zhen
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    References(7)

    [1] [1] B. Henderson, R. Η. Bartram. Crystal-Field Engineering oi Solid-State Laser Materials [М]. Cambridge University Press, 2000. 326

    [2] [2] Gan Fuxi. Information Materials [M].Tiar in: Tiargin University Press, 2003. 620-632

    [4] [4] Deng Peizhen. Tirsapphire crystal used in ultra iast lasers anu amplifiers[J] J. Infrared Millim. Waves, 2002, 21(Suppl.):41~ 44

    [5] [5] Μ. R. Kokta. Tunable Solid State Loser[M]. New York, 1987. 89

    [6] [6] C. P. Khattak, A. N. Scoville. Growth of laser crystals by heat exchange method (HET)[C]. SPIE, 1986, 681:58-61

    [7] [7] Zhou Yongzong. The TGT growth devices for high-temperature crystals[P]. Chinese patent apply No. 85100534.9,1985

    CLP Journals

    [1] He Cao, Zebiao Gan, Xiaoyan Liang, Lianghong Yu, Wenqi Li, Zhen Guo, Pei Huang, Jianye Wang, Min Xu, Yin Hang, "Optical property measurements of 235 mm large-scale Ti:sapphire crystal," Chin. Opt. Lett. 16, 071401 (2018)

    [2] Zhang Xiaocui, Si Jiliang, Xu Min, Liang Xiaoyan, Chu Yuxi. Growth Method, Optical and Laser Properties of Titanium-Doped Sapphire Crystals[J]. Chinese Journal of Lasers, 2014, 41(5): 506001

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    SI Ji-Uang, XU Jun, ZHAO Guang-jun, ZHOU Guo-qing, LI Hong-jun, WANG Jing-ya, DENG Pei-zhen. Development of Research on Large-Sized Ti:Sapphire Laser Crystals[J]. Chinese Journal of Lasers, 2004, 31(s1): 381

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Jan. 29, 2013

    The Author Email: Ji-Uang SI (suiliang@sohu.com)

    DOI:

    CSTR:32186.14.

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