Chinese Journal of Lasers, Volume. 31, Issue s1, 381(2004)
Development of Research on Large-Sized Ti:Sapphire Laser Crystals
[1] [1] B. Henderson, R. Η. Bartram. Crystal-Field Engineering oi Solid-State Laser Materials [М]. Cambridge University Press, 2000. 326
[2] [2] Gan Fuxi. Information Materials [M].Tiar in: Tiargin University Press, 2003. 620-632
[4] [4] Deng Peizhen. Tirsapphire crystal used in ultra iast lasers anu amplifiers[J] J. Infrared Millim. Waves, 2002, 21(Suppl.):41~ 44
[5] [5] Μ. R. Kokta. Tunable Solid State Loser[M]. New York, 1987. 89
[6] [6] C. P. Khattak, A. N. Scoville. Growth of laser crystals by heat exchange method (HET)[C]. SPIE, 1986, 681:58-61
[7] [7] Zhou Yongzong. The TGT growth devices for high-temperature crystals[P]. Chinese patent apply No. 85100534.9,1985
Get Citation
Copy Citation Text
SI Ji-Uang, XU Jun, ZHAO Guang-jun, ZHOU Guo-qing, LI Hong-jun, WANG Jing-ya, DENG Pei-zhen. Development of Research on Large-Sized Ti:Sapphire Laser Crystals[J]. Chinese Journal of Lasers, 2004, 31(s1): 381
Category: laser devices and laser physics
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email: Ji-Uang SI (suiliang@sohu.com)
CSTR:32186.14.