Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 28, Issue 3, 272(2001)

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

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This paper describes thepreparation of AlN films using pulsed laser deposition. Smooth and highly transparent AlNfilms were deposited on Si (100) substrates. The gap of the films was determined to be 5.7eV. The effects of substrate temperature and annealing temperature were also examined.

Keywords

aluminum nitride laser ablation pulsed laser deposition

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition[J]. Chinese Journal of Lasers, 2001, 28(3): 272

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Paper Information

Category: laser manufacturing

Received: Oct. 8, 1999

Accepted: --

Published Online: Aug. 10, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology