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Chinese Optics Letters, Volume. 13, Issue 12, 121601(2015)

Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films

Ke Zhang, Jincheng Lin, and Yang Wang*
Author Affiliations
  • Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    Cited By

    [5] Tao Wei, Jingsong Wei, Kui Zhang, Hongxia Zhao, Long Zhang. Grayscale image recording on Ge2Sb2Te5 thin films through laser-induced structural evolution. Scientific Reports, 7(2017).

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    Ke Zhang, Jincheng Lin, Yang Wang, "Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films," Chin. Opt. Lett. 13, 121601 (2015)

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    Paper Information

    Category: Materials

    Received: Apr. 8, 2015

    Accepted: Oct. 16, 2015

    Published Online: Sep. 12, 2018

    The Author Email: Yang Wang (ywang@siom.ac.cn)

    DOI:10.3788/COL201513.121601

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology