Chinese Optics Letters, Volume. 5, Issue s1, 143(2007)

AlInGaAs/AlGaAs/GaAs strained quantum well lasers with high characteristic temperature

Yuxia Wang*, Chunling Liu, Jilong Tang, Baoxue Bo, and Guojun Liu
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
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    References(6)

    [1] [1] D. D. MoGregor, Rev. Sci. Instrum. 58, 1067 (1987).

    [2] [2] C. A. Wang, IEEE. J. Quantum Electron. 28, 942 (1992).

    [3] [3] B. Du, Semiconductor Laser Theory (in Chinese) (Weapon Industry Publishing Company, Beijing, 2001).

    [4] [4] Y. Zhang, W. Chen, H. Jiang, C. Liu, and S. Liu, Semiconductor Journal (in Chinese) 22, 11 (2001).

    [6] [6] G. H. B. Thompson, G. D. Henshall, J. E. A. Whiteaway, and P. A. Kirkby, J. Appl. Phys. 47, 1 (1976).

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    Yuxia Wang, Chunling Liu, Jilong Tang, Baoxue Bo, Guojun Liu, "AlInGaAs/AlGaAs/GaAs strained quantum well lasers with high characteristic temperature," Chin. Opt. Lett. 5, 143 (2007)

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    Paper Information

    Received: Jan. 1, 1949

    Accepted: --

    Published Online: Jul. 15, 2007

    The Author Email: Yuxia Wang (wangyuxia20042004@tom.com)

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