[1] [1] Kuang Hai, Liu Junlin, Cheng Haiying et al.. Effect of transferred submount materials on properties of GaN-based LED chips grown on Si substrate［J］. Acta Optica Sinica, 2008, 28(1): 143～145

[2] [2] Shi Lingna, Huang Shanglian, Sun Jiyong et al.. Optical performance analysis and experiment of grating light modulator with LED light source［J］. Acta Optica Sinica, 2008, 28(11): 2225～2231

[3] [3] Zongyou Yin, Densen Cao, Jingzhi Yin et al.. Fabrication of blue LEDs on big chips［J］. Chin. Opt. Lett., 2003, 1(4): 220～221

[4] [4] Wu Haibin, Wang Changling, He Sumei. Research of color rendering of white LED based on red and green phosphors［J］. Acta Optica Sinica, 2008, 28(9): 1777～1782

[5] [5] Soonjin So, Choonbae Park. Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips［J］. Thin Solid Films, 2008, 516(8): 2031～2034

[6] [6] Guangdi Shen, Xiaoli Da, Xia Guo et al.. Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes［J］. J. Luminesce., 2007, 127(2): 441～445

[7] [7] Xiaoli Da, Xia Guo, Limin Dong et al.. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes［J］. Solid-State Electronics, 2006, 50(3): 508～510

[8] [8] Yanxu Zhu, Chen Xu, Xiaoli Da et al.. GaN-based light-emitting diodes with SiONx on sidewalls［J］. Semiconductor Science and Technology, 2007, 22(6): 659～662

[9] [9] Da Xiaoli, Shen Guangdi, Xu Chen et al.. Study on enhancement of light output power for GaN based LED by coating passivation layers［J］. Research & Progress of SSE, 2007, 27(4): 558～561

[10] [10] Mo Chunlan, Fang Wenqing, Liu Hechu et al.. Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD［J］. Crystal Growth, 2005, 28(5): 312～316

[11] [11] G. Meneghesso, S. Levada, E. Zanoni et al.. Reliability of visible GaN LEDs in plastic package［J］. Microelectronics Reliability, 2003, 43(9～11): 1737～1742

[12] [12] Zhou Liyin, He Ying, Zhang Wenfei et al.. Development of epoxy/epoxy-silsesquioxane hybrid material for LED packaging［J］. Engineering Plastics Application, 2009, 37(3): 5～8

[13] [13] M. Meneghini, L. Trevisanello, C. Sanna et al.. High temperature electro-optical degradation of InGaN/GaN HBLEDs［J］. Microelectronics Reliability, 2007, 47(9～11): 1625～1629

[14] [14] Lin Liang, Chen Zhizhong, Chen Ting et al.. Characteristics of the accelerated aging white LEDs［J］. Chin. J. Luminesc, 2005, 26(5): 617～621

[15] [15] Z. Q. Fang, D. C. Reynolds, D. C. Look. Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes［J］. J. Electron. Mater., 2000, 29(4): 448～450

[16] [16] X. A. Cao, P. M. Sandvik, S. F. LeBoeuf et al.. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses［J］. Microelectronics Reliability, 2003, 43(12): 1987～1991