[1] [1] JIN L, ZHAO K, XU S H, et al. Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption［J］. Scripta Materialia, 2021, 190: 91-96.

[3] [3] SEGAL A S, KARPOV S Y, MAKAROV Y N, et al. On mechanisms of sublimation growth of AlN bulk crystals［J］. Journal of Crystal Growth, 2000, 211(1/2/3/4): 68-72.

[4] [4] NOVESKI V, SCHLESSER R, RAGHOTHAMACHAR B, et al. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules［J］. Journal of Crystal Growth, 2005, 279(1/2): 13-19.

[5] [5] EPELBAUM B M, BICKERMANN M, NAGATA S, et al. Similarities and differences in sublimation growth of SiC and AlN［J］. Journal of Crystal Growth, 2007, 305(2): 317-325.

[6] [6] RADHAKRISHNAN SUMATHI R. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method［J］. Physica Status Solidi (c), 2014, 11(3/4): 545-548.

[7] [7] BAHNG W, KITOU Y, NISHIZAWA S, et al. Rapid enlargement of SiC single crystal using a cone-shaped platform［J］. Journal of Crystal Growth, 2000, 209(4): 767-772.

[8] [8] DALMAU R, MOODY B, XIE J Q, et al. Characterization of dislocation arrays in AlN single crystals grown by PVT［J］. Physica Status Solidi (a), 2011, 208(7): 1545-1547.

[9] [9] WANG Q K, HUANG J L, WANG Z H et al. Anisotropic three-dimensional thermal stress modeling and simulation of homoepitaxial AlN single crystal growth by physical vapor transport method［J］. Crystal Growth & Design, 2018, 18(5): 2998-3307.

[10] [10] HERRO Z G, ZHUANG D, SCHLESSER R, et al. Growth of AlN single crystalline boules［J］. Journal of Crystal Growth, 2010, 312(18): 2519-2521.

[11] [11] WU B, MA R H, ZHANG H, et al. Growth kinetics and thermal stress in AlN bulk crystal growth［J］. Journal of Crystal Growth, 2003, 253(1/2/3/4): 326-339.

[12] [12] GUO W, KUNDIN J, BICKERMANN M, et al. A study of the step-flow growth of the PVT-grown AlN crystals by a multi-scale modeling method［J］. CrystEngComm, 2014, 16(29): 6564-6577.

[13] [13] WANG Q K, HUANG J L, FU D Y, et al. Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process［J］. Journal of Crystal Growth,2019,515:21-25.

[14] [14] KARPOV S Y, ZIMINA D V, MAKAROV Y N, et al. Sublimation growth of AlN in vacuum and in a gas atmosphere［J］. Physica Status Solidi (a), 1999, 176(1): 435-438.

[15] [15] DUPRET F, NICODME P, RYCKMANS Y, et al. Global modelling of heat transfer in crystal growth furnaces［J］. International Journal of Heat and Mass Transfer, 1990, 33(9): 1849-1871.

[16] [16] WU L. Numerical simulation of Czochralski bulk crystal growth process： investigation of transport effects in melt and gas phases［D］. Louvain-la-Neuve, Belgium: UCL, 2008.

[17] [17] DENG X L, REN Z M, DENG K et al. The study of power consumption on Czochralski silicon single crystal growth process for photovoltaic through numerical simulat［J］. Rare Metal Materials and Engineering,2016,45(11):2907-2911.

[18] [18] WU B, NOVESKI V, ZHANG H, et al. Design of an RF-heated bulk AlN growth reactor: induction heating and heat transfer modeling［J］. Crystal Growth & Design, 2005, 5(4): 1491-1498.

[20] [20] LIU L H, EDGAR J H. A global growth rate model for aluminum nitride sublimation［J］. Journal of the Electrochemical Society, 2002, 149(1): G12.

[21] [21] WANG Z H, DENG X L, CAO K, et al. Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations［J］. Journal of Crystal Growth, 2017, 474: 76-80.

[22] [22] SUMATHI R R. Common issues in the hetero-epitaxial seeding on SiC substrates in the sublimation growth of AlN crystals［J］. Applied Physics A, 2021, 127(8): 1-13.