Semiconductor Optoelectronics, Volume. 46, Issue 2, 216(2025)
Design and Optimization of Mid-Wavelength Avalanche Photodiodes Based on Antimonides
To satisfy the demand for linear avalanche photodetectors (APDs) in low-light detection, an APD based on an InAs/GaSb second-class superlattice and AlGaAsSb quaternary alloy as absorption and multiplier layers, respectively, was designed in this study. By constructing a collision ionization model for the AlGaAsSb alloy and using the SILVACO-ATLAS simulation platform, the effects of structural parameters such as the thickness and doping concentration of the multiplication and absorption layers on the device's I–V characteristics, electric-field distribution, and transient response were systematically simulated. The aim was to obtain the optimal model parameters to reduce dark current and improve gain. Additionally, the effect of different temperatures on device performance was investigated. Simulation results show that at 300 K, the gain at the operating voltage is 16.4 and the maximum gain at the breakdown voltage is 129.5, with a specific detectivity of 2.39 × 1011 cm·Hz1/2·W−1. This study provides a theoretical basis for the development of medium-wave infrared avalanche photodiodes operating at room temperature.
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WANG Peiyan, CHEN Weiqiang, LU Lidan, ZHU Lianqing, ZHANG Dongliang. Design and Optimization of Mid-Wavelength Avalanche Photodiodes Based on Antimonides[J]. Semiconductor Optoelectronics, 2025, 46(2): 216
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Received: Nov. 27, 2024
Accepted: Sep. 18, 2025
Published Online: Sep. 18, 2025
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