Journal of Synthetic Crystals, Volume. 54, Issue 5, 850(2025)

Prediction of Monolayer C2B6 with Ultra-High Carrier Mobility

Longjun REN*, Shihu CAI, Fuyuan WANG, and Ping JIANG
Author Affiliations
  • School of Mechanical Engineering, Wanjiang University of Technology, Ma'anshan243031, China
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    Figures & Tables(6)
    Structure and thermal stability of monolayer C2B6. Atomic structure at -2 V voltage (a) and the simulated STM configuration (b); energy and temperature of monolayer C2B6 in AIMD calculation with 10 ps at 300 K (c) and 600 K (d), the blue and black spheres represent B and C atoms, respectively
    Phonon spectrum of monolayer C2B6 and vibration modes obtained from perturbation density functional calculations. (a) Phonon spectrum; (b) atomic vibration modes of the first 9 orders
    Band structure and density of states of the monolayer C2B6. Band structure calculated by PBE (a), projected band structure calculated by HSE06 (b), and density of states (c)
    Energy and band edge position of monolayer C2B6 under external strain: the difference in energy (a) and band edge position (b) in the x and y directions
    Monolayer C2B6 photodetector model (a) and photocurrent calculated along the x (b) and y (c) directions
    • Table 1. Calculated effective mass (<i>m</i><sup>*</sup>), deformation constant (<i>D</i>), elastic modulus (<i>C</i>), and carrier (electron and hole) mobility (<i>μ</i>) of monolayer C<sub>2</sub>B<sub>6</sub> along the <i>x</i> and <i>y</i> directions

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      Table 1. Calculated effective mass (<i>m</i><sup>*</sup>), deformation constant (<i>D</i>), elastic modulus (<i>C</i>), and carrier (electron and hole) mobility (<i>μ</i>) of monolayer C<sub>2</sub>B<sub>6</sub> along the <i>x</i> and <i>y</i> directions

      DirectionType of carrierm*D/eVC/(N·m-1μ/(cm2·V-1·s-1
      xElectron1.221-1.919183360
      xHole1.743-2.714183241
      yElectron2.1212.771377205
      yHole0.4061.5743776 342
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    Longjun REN, Shihu CAI, Fuyuan WANG, Ping JIANG. Prediction of Monolayer C2B6 with Ultra-High Carrier Mobility[J]. Journal of Synthetic Crystals, 2025, 54(5): 850

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    Paper Information

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    Received: Oct. 26, 2024

    Accepted: --

    Published Online: Jul. 2, 2025

    The Author Email: Longjun REN (281867042@qq.com)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0280

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