Journal of Synthetic Crystals, Volume. 54, Issue 5, 850(2025)
Prediction of Monolayer C2B6 with Ultra-High Carrier Mobility
Fig. 1. Structure and thermal stability of monolayer C2B6. Atomic structure at -2 V voltage (a) and the simulated STM configuration (b); energy and temperature of monolayer C2B6 in AIMD calculation with 10 ps at 300 K (c) and 600 K (d), the blue and black spheres represent B and C atoms, respectively
Fig. 2. Phonon spectrum of monolayer C2B6 and vibration modes obtained from perturbation density functional calculations. (a) Phonon spectrum; (b) atomic vibration modes of the first 9 orders
Fig. 3. Band structure and density of states of the monolayer C2B6. Band structure calculated by PBE (a), projected band structure calculated by HSE06 (b), and density of states (c)
Fig. 4. Energy and band edge position of monolayer C2B6 under external strain: the difference in energy (a) and band edge position (b) in the x and y directions
Fig. 5. Monolayer C2B6 photodetector model (a) and photocurrent calculated along the x (b) and y (c) directions
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Longjun REN, Shihu CAI, Fuyuan WANG, Ping JIANG. Prediction of Monolayer C2B6 with Ultra-High Carrier Mobility[J]. Journal of Synthetic Crystals, 2025, 54(5): 850
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Received: Oct. 26, 2024
Accepted: --
Published Online: Jul. 2, 2025
The Author Email: Longjun REN (281867042@qq.com)