Two-dimensional materials have excellent electronic and optical properties， indicating their absolute advantage in the application of nanodevices. In this work， a novel two-dimensional material with a wrinkled structure （monolayer C₂B₆） was proposed， and its dynamic and thermal stability were calculated through first-principles simulations. It is interesting that monolayer C₂B₆ exhibits semiconductor behavior， while HSE06 calculation shows its ultra narrow bandgap of approximately 0.671 eV. The holes in monolayer C₂B₆ exhibit an ultra-high mobility of approximately 6 342 cm²·V^-1·s^-1 in the transport direction， which is greater than that of traditional transition metal disulfide materials. More importantly， the significant anisotropy of electron and hole mobility can separate photogenerated charges， indicating that monolayer C₂B₆ is an excellent photocatalyst. Then， new characteristics of light absorption were obtained， and anisotropic photocurrent also implies that monolayer C₂B₆ can be used as a potential optoelectronic device. Our research results provide theoretical guidance for the design and application of two-dimensional materials.