Chinese Journal of Lasers, Volume. 28, Issue 1, 25(2001)

Photoluminscence Study of Photoabsorption Induced Disordering

[in Chinese], [in Chinese], and [in Chinese]
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    References(4)

    [1] [1] W. D. Laidig, N. Holonyak Jr, M. D. Camras et al.. Disorder of an AlAs-GaAs superlattice by impurity diffusion. Appl. Phys. Lett., 1981, 38(10):776~778

    [2] [2] D. G. Deppe, L. J. Guido, N. Holonyak Jr et al.. Stripe-Geometry quantum well heterostructure AlxGa1-xAs-GaAs lasers defined by defect diffusion. Appl.Phys.Lett., 1986, 49(9):510~512

    [3] [3] J. H. Marsh, S. A. Bradshaw, A. C. Bryce et al.. Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP. J. Electron. Mater., 1991, 20(12):973~978

    [4] [4] C. J. McLean, J. H. Marsh, R. M. De La Rue et al.. Layer selective disordering by photoabsorption induced thermal diffusion in InGaAs/InP based multiquantum well structures. Electron. Lett., 1992, 28(12):1117~1119

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    [in Chinese], [in Chinese], [in Chinese]. Photoluminscence Study of Photoabsorption Induced Disordering[J]. Chinese Journal of Lasers, 2001, 28(1): 25

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    Paper Information

    Category: spectroscopy

    Received: Jul. 19, 1999

    Accepted: --

    Published Online: Aug. 10, 2006

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