The photoabsoptioninduced disordering (PAID) on lattice matched InGaAsP quaternary quantum wells isinvestigated using cw 1064 nm Nd:YAG laser. Quantum wells intermixing (QWI) is demonstrated byphotoluminescent (PL) spectrum. The process time could be reduced by heating the sample inadvance or focusing the laser beam. Two peaks of PL show that PAID technique could be usedfor processing the quantum wells locally on the wafer.