[1] [1] H. G. Bach,A. Beling,G. G. Mekonnen et al.. Design and fabrication of 60 Gb/s InP-based monolithic photoreceiver OEICs and modules[J]. IEEE J Selected Topics in Quantum Electronics,2002,8(6):1445-1450

[2] [2] Y. Zhang,C. S. Whelan,R. Leoni et al.. 40 Gbit/s OEIC on GaAs substrate through metamorphic buffer technology[J]. IEEE Electron. Device Lett.,2003,24(9):529-531

[3] [3] Jun Yang,Pallab Bhattacharya,Zetian Mi et al.. Quantum dot lasers and integrated optoelectronics on silicon platform invited paper[J]. Chin. Opt. Lett.,2008,6(10):727-731

[4] [4] Zhigong Wang,M. Berroth,V. Hurm et al.. 17 GHz Bandwidth 17 dB Gain 0.3 um HEMT Low-Power Limiting Amplifier[C]. Symposium on VLSI Circuits,Digest of Technical Papers,1995,97-98

[5] [5] Z. Lao,M. Berroth,V. Hurm et al.. Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 μm AlGaAs GaAs-HEMTs[J]. Electron. Lett.,1996,32(18):1708-1709

[6] [6] Zhigong Wang,M. Berroth,A. Thiede et al.. Circuit techniques for 10 and 20 Gb/s clock recovery using a fully balanced narrowband regenerative frequency divider with 0.3 um HEMTs[C]. IEEE International Solid-State Circuits Conference,1996,204-206

[7] [7] Z. Lao,M. Berroth,V. Hrum et al.. A monolithic 24.9 GHz limiting amplifier using 0.2 μm AlGaAs/GaAs HEMTs[J]. IEEE GaAs IC Symposium,1996,211-214

[8] [8] Zhihao Lao,M. Berroth,V. Hurm et al.. 25 Gb/s AGC amplifier,22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs[C]. IEEE International Solid-State Circuits Conference,1997,356-358

[9] [9] Fan Chao,Ye YuTang,Wu YunFeng et al.. Improving of the equipment of laser assisted microprocessing used in OEICs[J]. Chinese J. Lasers,2007,44(s1):227-230

[10] [10] Andrew Xiang,Walter Wohlmuth,Patrick Fay et al.. Modeling of InGaAs MSM Photodetector for circuit-level simulation[J]. J. Lightwave Technol.,1996,14(5):716-723

[11] [11] S. M. Sze. Physics of Semiconductor Devices[M]. 2nd ed. Wiley,New York,1981

[12] [12] Fan Chao,Ye YuTang,Liu Lin et al.. Study of infrared thermal image in process of wet etching[J]. Acta Optica Sinica,2006,26(9):1350-1353

[13] [13] E. Sackinger,W. C. Fischer. A 3 GHz 32 dB CMOS limiting amplifier for sONET OC-48 receivers[J]. IEEE,J. Solatic,2000,35(12):1884-1888

[14] [14] Mohammad Reza Aamadi B.,Ay din I. Karsilayan,Jose Silva-Martinez. Design of transimpedance and limiting amplifiers for 10 Gb/s optical communication systems[J]. IEEE,2002,3:III164-III167

[15] [15] K. Laursen,C. Yuan,D. Chu. Designing high-speed MMICs and OEICs for 10 Gb/s and 40 Gb/s optical transponder front-ends[C]. IEEE GaAs Symposium Digest,2002. 221-224

[16] [16] T. Yoon,B. Jalali. Front-end CMOS chipset for fiber-based gigabit ether-net[C]. Digest of Symposium on LVSI Circuits,1998. 188-191