Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer

Xiaoqing Du; Benkang Chang; Yunsheng Qian; Pin Gao

doi:10.3788/COL201109.010401

Chinese Optics Letters, Volume. 9, Issue 1, 010401(2011)

Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer

Xiaoqing Du¹, Benkang Chang², Yunsheng Qian², and Pin Gao²

¹Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

²Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China

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Xiaoqing Du, Benkang Chang, Yunsheng Qian, Pin Gao, "Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer," Chin. Opt. Lett. 9, 010401 (2011)

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Paper Information

Received: Jul. 5, 2010

Accepted: Aug. 3, 2010

Published Online: Jan. 7, 2011

The Author Email:

DOI:10.3788/COL201109.010401

Topics

laser devices and laser physics

Lasers and Laser Optics

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laser manufacturing

Instrumentation, Measurement and Metrology