Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Jun Yang; Pallab Bhattacharya; Zetian Mi; Guoxuan Qin; Zhenqiang Ma

doi:10.3788/COL20080610.0727

Chinese Optics Letters, Volume. 6, Issue 10, 727(2008)

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Jun Yang^*, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, and Zhenqiang Ma

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48015, USA2 Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada3 Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706, USA

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[1] Kun Zhong, Zhisong Xiao, Guo’an Cheng, Xiangqian Cheng, Ruiting Zheng, "Dependency of photoluminescence from SiO2 thin f ilms containing Si1-xGex quantum dots on Ge/Si doping ratio," Chin. Opt. Lett. 7, 826 (2009)

[2] Li Yue, Qian Gong, Chunfang Cao, Jinyi Yan, Yang Wang, Ruohai Cheng, Shiguo Li, "High-performance InAs/GaAs quantum dot laser with dot layers grown at 425 oC," Chin. Opt. Lett. 11, 061401 (2013)

[3] Xiaochuan Han, Lantian Feng, Yuxuan Li, Lanxuan Zhang, Junfeng Song, Yongsheng Zhang, "Experimental observations of boundary conditions of continuous-time quantum walks," Chin. Opt. Lett. 17, 052701 (2019)

[4] Fan Chao, Chen Tangsheng, Yang Lijie, Feng Ou, Jiao Shilong, Wu Yunfeng, Ye Yutang. Fabrication of Optoelectronic Integrated Circuits Optical Receiver Front-End and Limiting Amplifier[J]. Acta Optica Sinica, 2010, 30(3): 777

[5] Yan Lu, Xiao Zhisong, Zhang Feng, Zhu Fang, Zhou Bo, Huang Anping, Zhu Yongchang. Advances of Silicon-Based Integrated Photonic Devices and Applications in Optical Gyroscope and Optical Communication[J]. Chinese Journal of Lasers, 2009, 36(3): 547

Cited By

[1] Zetian Mi, Jun Yang, Pallab Bhattacharya. Lattice Engineering, 319(2012).

[2] Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon. Nanomaterials, 12, 741(2022).

[3] A. D. Lee, Qi Jiang, Mingchu Tang, Yunyan Zhang, A. J. Seeds, Huiyun Liu. InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates. IEEE Journal of Selected Topics in Quantum Electronics, 19, 1901107(2013).

[4] Weiming Wang, Jun Yang, Xin Zhu, Jamie Phillips. Intermediate-band solar cells based on dilute alloys and quantum dots. Frontiers of Optoelectronics in China, 4, 2(2011).

[5] . Silicon Photonics for Telecommunications and Biomedicine, 219(2016).

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Jun Yang, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, Zhenqiang Ma, "Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper," Chin. Opt. Lett. 6, 727 (2008)

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Paper Information

Received: May. 19, 2008

Accepted: --

Published Online: Dec. 4, 2008

The Author Email: Jun Yang (junyang@umich.edu)

DOI:10.3788/COL20080610.0727

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology