Optoelectronic Technology, Volume. 39, Issue 1, 21(2019)

Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion

FU Haishi*, PENG Hao, ZHANG Xiaodong, and ZHANG Shengdong
Author Affiliations
  • [in Chinese]
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    FU Haishi, PENG Hao, ZHANG Xiaodong, ZHANG Shengdong. Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion[J]. Optoelectronic Technology, 2019, 39(1): 21

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 6, 2018

    Accepted: --

    Published Online: Apr. 11, 2019

    The Author Email: Haishi FU (1701213515@sz.pku.edu.cn)

    DOI:10.19453/j.cnki.1005-488x.2019.01.005

    Topics