[1] [1] H. Temkin, D. Coblentz, R. A. Logan et al.. High temperature characteristics of InGaAsP/InP laser structures. Appl. Phys. Lett., 1993, 62(19):2402～2404

[2] [2] Ron Huang, John G. Simmons, Paul E. Jessop et al.. Thermal behavior of tensile-strain InGaAsP/InP lasers with varying ridgewidth. IEEE Photon. Technol. Lett., 1997, 9(7):889～891

[3] [3] Weng W. Chow, Kent D. Choquette, Mary H. Crawford et al.. Design, fabrication, and performance of infrared and visible vertical cavity surface-emitting lasers. IEEE J. Quantum Electron., 1997, 33(10):1810～1824

[4] [4] Stefan Rapp, Joachim Piprek, Klaus Streubel et al.. Temperature sensitivity of 1.54-μm vertical-cavity lasers with an InP-based Bragg reflector. IEEE J. Quantum Electron., 1997, 33(10):1839～1945

[5] [5] W. Nakwaski. Simplified thermal analysis of a laser diode array. Sov. J. Quantum Electron., 1984, 14(2):266～267

[6] [6] Hongji Zhang. Thermal Conduction. Beijing: Higher Education Press, 1992 (in Chinese)

[7] [7] T. P. Pearsall. GaInAsP Alloy Semiconductors. Chichester, New York. Brisbane, Toronto, Singapore: John Wiley & Sons, 1982. 379

[8] [8] C. L. Chua, R. L. Thornton, D. W. Treat et al.. Independently addressable VCSEL arrays on 3-μm pitch. IEEE Photon. Technol. Lett., 1998, 10(7):917～919