[1] [1] JANG H E, CHO H H, YU H K, et al. Synthesis of polycrystalline gallium oxide solar-blind ultraviolet photodetector by aerosol deposition［J］. Journal of the European Ceramic Society, 2023, 43(6): 2534-2540.

[2] [2] LIANG J B, TAKATSUKI D, HIGASHIWAKI M, et al. Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high-power device applications［J］. Japanese Journal of Applied Physics, 2022, 61: SF1001.

[4] [4] CHEN Z H, WANG Y S, ZHANG N, et al. Effects of preparation parameters on growth and properties of β-Ga2O3 film［J］. Chinese Physics B, 2023, 32(1): 017301.

[5] [5] MCCANDLESS J P, PROTASENKO V, MORELL B W, et al. Controlled Si doping of β-Ga2O3 by molecular beam epitaxy［J］. Applied Physics Letters, 2022, 121(7): 072108.

[6] [6] ITOH T, MAUZE A, ZHANG Y W, et al. Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy［J］. APL Materials, 2023, 11(4): 041108.

[7] [7] PILLIADUGULA R, GOPALAKRISHNAN N. Room temperature ammonia sensing performances of pure and Sn doped β-Ga2O3［J］. Materials Science in Semiconductor Processing, 2021, 135: 106086.

[8] [8] DANG J N, ZHENG S W, CHEN L, et al. Electronic structures and optical properties of Si- and Sn-doped β-Ga2O3: a GGA+ U study［J］. Chinese Physics B, 2019, 28(1): 016301.

[9] [9] ARIMA-OSONOI H, YAMAZAKI K, SIMURA R, et al. Local structure investigations of Sn and Mn doped in β-Ga2O3 by X-ray absorption spectroscopy［J］. Journal of Crystal Growth, 2021, 570: 126223.

[10] [10] WANG B G, LOOK D, FARLOW G. Optical and electrical properties of Ti-doped β-Ga2O3 (Ti3+∶β-Ga2O3) bulk crystals grown by floating zone method［J］. Journal of Physics D: Applied Physics, 2020, 53(44): 444001.

[13] [13] WANG D, MA X C, CHEN R R, et al. Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films［J］. Optical Materials, 2022, 129: 112491.

[14] [14] CHEN J W, TANG H L, LI Z W, et al. Highly sensitive X-ray detector based on a β-Ga2O3∶Fe single crystal［J］. Optics Express, 2021, 29(15): 23292-23299.

[15] [15] FENG Z X, BHUIYAN A F M A U, KALARICKAL N K, et al. Mg acceptor doping in MOCVD (010) β-Ga2O3［J］. Applied Physics Letters, 2020, 117(22): 222106.

[17] [17] ZHANG Z D. First-principle calculations of electronic and optical properties of β-Ga2O3 with oxygen vacancies and Ti, Al doping［D］.Guiyang: Guizhou University, 2020 (in Chinese).

[20] [20] LU J J, LU Y M, TASI S I, et al. Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films［J］. Optical Materials, 2007, 29(11): 1548-1552.