Chinese Optics, Volume. 15, Issue 2, 242(2022)
Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon
Fig. 1. Schematic diagram of the picosecond laser induced damage experiment setup
Fig. 2. The size of the damaged area changes with the laser’s energy density
Fig. 7. Damage morphography from the pulse accumulation effect at the energy densities of 0.52 J/cm2、1.07 J/cm2
Fig. 8. Variation of the ablation zone size with the number of pulses
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Jia-min WANG, Yan-hui JI, Zhi-yong LIANG, Fei CHEN, Chang-bin ZHENG. Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon[J]. Chinese Optics, 2022, 15(2): 242
Category: Original Article
Received: Aug. 16, 2021
Accepted: Nov. 18, 2021
Published Online: Mar. 28, 2022
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