Chinese Optics, Volume. 15, Issue 2, 242(2022)

Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon

Jia-min WANG1,2, Yan-hui JI1,2, Zhi-yong LIANG3, Fei CHEN1, and Chang-bin ZHENG1、*
Author Affiliations
  • 1State Key Laboratory of Laser-Matter Interaction, Changchun Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Institute of Tracking and Telecommunications Technology, Beijing 100094, China
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    Figures & Tables(9)
    Schematic diagram of the picosecond laser induced damage experiment setup
    The size of the damaged area changes with the laser’s energy density
    Damage morphography at different energy densities
    Damage morphography at the energy density of 302 J/cm2
    Damage morpography at the energy density of 21.9 J/cm2
    Damage morphography at the energy density of 3.04 J/cm2
    Damage morphography from the pulse accumulation effect at the energy densities of 0.52 J/cm2、1.07 J/cm2
    Variation of the ablation zone size with the number of pulses
    Damage morphology from the pulse accumulation effect
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    Jia-min WANG, Yan-hui JI, Zhi-yong LIANG, Fei CHEN, Chang-bin ZHENG. Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon[J]. Chinese Optics, 2022, 15(2): 242

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    Paper Information

    Category: Original Article

    Received: Aug. 16, 2021

    Accepted: Nov. 18, 2021

    Published Online: Mar. 28, 2022

    The Author Email:

    DOI:10.37188/CO.2021-0160

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