The nanocrystalline silicon films are prepared by pulsed laser ablation at the ambient Ar pressure of 10 Pa and the target-to-substrate distance from 1 cm to 6 cm. Both the X-ray diffraction (XRD) and Raman spectra indicate the films are nanocrystalline, which means that they are composed of Si nanoparticles. The surface morphology of the nanocrystalline silicon films is observed by using scanning electron microscopy (SEM). The result shows that with increasing target-substrate distance, the average size of Si nanoparticles first decreases and reaches its minimum at 3 cm, and then increases. The transport dynamic process of the ablated particles in different target-to-substrate distances is numerically simulated by Monte Carlo method. The numerical simulations accord with the experimental results.