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Microelectronics, Volume. 52, Issue 3, 459(2022)

Study on Noise Performance of a GaN Homo-Heterojunction IMPATT Diode

DAI Yang1, DANG Jiangtao1, YE Qingsong1, LU Zhaoyang1, ZHANG Weiwei2, LEI Xiaoyi1, ZHAO Shenglei3, and ZHAO Wu1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DAI Yang, DANG Jiangtao, YE Qingsong, LU Zhaoyang, ZHANG Weiwei, LEI Xiaoyi, ZHAO Shenglei, ZHAO Wu. Study on Noise Performance of a GaN Homo-Heterojunction IMPATT Diode[J]. Microelectronics, 2022, 52(3): 459

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    Received: Jul. 18, 2021

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210267

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology