Journal of Synthetic Crystals, Volume. 53, Issue 5, 741(2024)
Research Progress on the Growth of Silicon Carbide Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues
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GU Peng, LEI Pei, YE Shuai, HU Jin, WU Ge. Research Progress on the Growth of Silicon Carbide Single Crystal via Top-Seeded Solution Growth Method and Its Key Issues[J]. Journal of Synthetic Crystals, 2024, 53(5): 741
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Received: Dec. 26, 2023
Accepted: --
Published Online: Aug. 22, 2024
The Author Email: GU Peng (1620472714@qq.com)
CSTR:32186.14.
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