Journal of Synthetic Crystals, Volume. 53, Issue 2, 329(2024)

Boron Doping Technology for the Front Polysilicon Layer of Full TOPCon Cells

ZHANG Bo1, SONG Zhicheng1,2, NI Yufeng1, and WEI Kaifeng1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(15)

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    [3] [3] RICHTER A, BENICK J, FELDMANN F, et al. N-type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation[J]. Solar Energy Materials and Solar Cells, 2017, 173: 96-105.

    [4] [4] TAO Y G, UPADHYAYA V, JONES K, et al. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity[J]. AIMS Materials Science, 2016, 3(1): 180-189.

    [5] [5] PEIBST R, LARIONOVA Y, REITER S, et al. Implementation of n+ and p+ poly junctatom on front and rear side of double-side contacted industrial silicon solar cells[C] 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, Germany, 2016: 323-327.

    [6] [6] ANONYMITY. Jinkosolar series new products shine at SNEC 2023 exhibition in Shanghai[EB/OL]. (2023-05-24)[2023-08-08]. https://www.jinkosolar.com/site/newsdetail/1549 (in Chinese).

    [7] [7] ANONYMITY. 26.7%! To refresh the N-type TOPCon battery with the world's highest efficiency![EB/OL]. (2022-04-11)[2023-08-08]. http://www.jolywood.cn/NewsDetails-436-1442.html (in Chinese).

    [8] [8] LONG W, YIN S, PENG F G, et al. On the limiting efficiency for silicon heterojunction solar cells[J]. Solar Energy Materials and Solar Cells, 2021, 231: 111291.

    [9] [9] YE J C. Exploration of low-cost and high-efficiency development paths for TOPCon cells[C]. 18th China SoG Silicon and PV Power Conference, 2022: 2615-2640 (in Chinese).

    [10] [10] GAO J Q, GUO Y G, QU X Y, et al. Study on selective emitter technology of n-type IBC solar cell[J]. Journal of Synthetic Crystals, 2022, 51(11): 1929-1935 (in Chinese).

    [11] [11] ZHANG Z. Study on tunnel oxide passivation contact (TOPCon) solar cells[D].Kunming: Kunming University of Science and Technology, 2019: 26-26 (in Chinese).

    [12] [12] PADHAMNATH P, WONG J, NAGARAJAN B, et al. Metal contact recombination in mono PolyTM solar cells with screen-printed & fire-through contacts[J]. Solar Energy Materials and Solar Cells, 2019, 192: 109-116.

    [13] [13] WU Y, STODOLNY M K, GEERLIGS L J, et al. In-situ doping and local overcompensation of high performance LPCVD polysilicon passivated contacts as approach to industrial IBC cells[J]. Energy Procedia, 2016, 92: 427-433.

    [14] [14] MA D. High-quality p-type tunneling silicon oxide passivation contact and its application in high-efficiency crystalline silicon solar cells[D].Kunming: Yunnan University, 2022 (in Chinese).

    [15] [15] YANG L, LIU D W, NI Y F, et al. A N-type TOPCon solar cell and its production method: CN115036384A[P]. 2022-09-09 (in Chinese).

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    ZHANG Bo, SONG Zhicheng, NI Yufeng, WEI Kaifeng. Boron Doping Technology for the Front Polysilicon Layer of Full TOPCon Cells[J]. Journal of Synthetic Crystals, 2024, 53(2): 329

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    Paper Information

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    Received: Aug. 14, 2023

    Accepted: --

    Published Online: Jul. 30, 2024

    The Author Email:

    DOI:

    CSTR:32186.14.

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