Fig. 1. (Color online) (a) Schematic cross-section of the fabricated recess-free AlGaN/GaN SBD. I–V characteristics of device A and B at RT on the (b) log scale and (c) linear scale. (d) I–V characteristics of 8 devices for A and B.

Fig. 2. (Color online) Temperature-dependent I–V characteristics of (a) device A and (b) device B. (c) Dependence of n and qφ_b on the temperature for both devices. (d) The dependence of qφ_b on n for two diodes; the extrapolation at n = 1 of the linear fit of the data gives a value of the mean barrier height.

Fig. 3. (Color online) (a) Arrhenius plot of I_R for both devices. (b) E_A extracted from the Arrhenius plot.

Fig. 4. (Color online) (a) 1 MHz C–V characteristics under the reverse bias voltage. (b) Calculated E–V characteristics under the reverse bias voltage.

Fig. 5. (Color online) ln(J/E) versus E^0.5 at different temperatures for (a) device A and (b) device B. (c) Extracted ε_s(h) at different temperatures for both devices.

Fig. 6. (Color online) ln (J/E) versus 1000/T at various temperatures for (a) device A and (b) device B. Extracted qφ_eff(E) at various temperatures for (c) device A and (d) device B.

Fig. 7. (Color online) ln(J/E²) versus 1/E at low temperature for (a) device A and (b) device B. (c) Extracted qφ_b from the slope at various temperatures for both devices. (d) Impact of β on qφ_b extracted by FN model for Ni SBD.

Fig. 8. (Color online) Schematic band diagram of carrier transport mechanisms at reverse bias for TiN SBD and Ni/Au SBD.