INFRARED, Volume. 45, Issue 9, 1(2024)

Study on Medium-Wave/ Medium-Wave Two-Color HgCdTe Materials by Molecular Beam Epitaxy

Zhen LI, Dan WANG, Wei-rong XING, Cong WANG, Rui ZHOU, and Wei-lin SHE
Author Affiliations
  • [in Chinese]
  • show less
    References(3)

    [3] [3] Reddy M, Wilde J,Peterson J M, et al. Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam Milling [J]. Journal of Electronic Materials, 2012, 41(10): 29572964.

    [4] [4] Vilela M F, Buell A A, Newton M D, et al. Control and Growth of Middle Wave Infrared (MWIR) Hg1-xCdxTe on Si by Molecular Beam Epitaxy [J]. Journal of Electronic Materials, 2005, 34(6): 898904.

    [9] [9] Aoki T, Chang Y, Badano G, et al. Defect Characterization for Epitaxial HgCdTe Alloys by Electron Microscopy [J]. Journal of Crystal Growth, 2004, 265(1-2): 224234.

    Tools

    Get Citation

    Copy Citation Text

    LI Zhen, WANG Dan, XING Wei-rong, WANG Cong, ZHOU Rui, SHE Wei-lin. Study on Medium-Wave/ Medium-Wave Two-Color HgCdTe Materials by Molecular Beam Epitaxy[J]. INFRARED, 2024, 45(9): 1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Oct. 19, 2023

    Accepted: --

    Published Online: Nov. 4, 2024

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics