Microelectronics, Volume. 52, Issue 1, 132(2022)
An Enhancement-Mode AlGaN/GaN HEMT with Double Heterojunction Under Gate
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CHEN Fei, FENG Quanyuan, YANG Hongjin, WEN Yan. An Enhancement-Mode AlGaN/GaN HEMT with Double Heterojunction Under Gate[J]. Microelectronics, 2022, 52(1): 132
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Received: Jul. 23, 2021
Accepted: --
Published Online: Jun. 14, 2022
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