Chinese Journal of Lasers, Volume. 47, Issue 5, 0500011(2020)

Laser Hole Drilling on Surface of Electronic Ceramic Substrates

Xuesong Mei1, Zixuan Yang1, and Wanqin Zhao1,2、*
Author Affiliations
  • 1State Key Laboratory for Manufacturing System Engineering, Xi'an Jiaotong University,Xi'an, Shaanxi 710049, China
  • 2School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
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    Figures & Tables(21)
    Schematic of material removal process under temperature field by millisecond laser
    Stress field effect. (a) Schematic of interaction between recoil pressure and material[27]; (b) molten material penetrates into Al2O3 pores due to recoil pressure[28]
    Thresholds of Al2O3 during millisecond laser processing[32]. (a) Melting threshold; (b) vaporization threshold
    Relationship between millisecond laser pulse duration and hole diameter[33-34]. (a) Al2O3 with thickness of 2.2 mm; (b) Al2O3 with thickness of 10 mm( laser peak power of 6 kW)
    Relationship between millisecond laser power and hole diameter[33-34]. (a) Al2O3 with thickness of 2.2 mm; (b) Al2O3 with thickness of 10 mm
    Cross-section images of the holes on Al2O3 drilled by millisecond laser[36] (Al2O3 with thickness of 10.5 mm, laser peak power of 6 kW)
    Relationship between of millisecond laser energy and hole depth. (a) Relationship between laser power and hole depth[36], Al2O3 with thickness of 10.5 mm, and pulse duration of 2 ms; (b) cross-section image of the holes on Al2<
    Relationship between millisecond laser action time and hole depth[24,36]. (a) Al2O3 with thickness of 1 mm, pulse duration of 15 ms, and laser energy of 600 mJ; (b) Al2O3 with thickness of 10.5 mm, pulse duration of 2 ms, peak power of 8 kW, and repetition rate of 10 Hz
    Relationship between millisecond laser repetition rate and hole diameter and depth. (a) Al2O3 with thickness of 10.5 mm, pulse duration of 2 ms, peak power of 8 kW, and focal plane position of -2 mm; (b) cross-section images of the holes on Al2O3
    Relationship between millisecond laser pulse duration and hole taper (Al2O3 with thickness of 10 mm)[34]
    Relationship between millisecond laser peak power and hole taper, and schematic of ejected particles resolidified around hole entrance[34]. (a) Hole taper versus laser peak power; (b) schematic of ejected particles resolidified around hole entrance
    Relationship between millisecond laser focal plane position and hole taper. (a) Al2O3 with thickness of 1 mm, pulse duration of 15 ms, laser energy of 600 mJ, and repetition rate of 5 Hz[24]; (b) Al2O3 with thickness of 10.5 mm, pulse duration of 2 ms, peak power of 8 kW, and repetition rate of 10 Hz[36]
    Ablation depth per pulse of Al2O3 versus nanosecond laser fluence (pulse duration of 10 ns and repetition rate of 1 Hz)[47]
    Material removal mechanism of nanosecond laser processing aluminum nitride, and morphology of hole wall[48-49]. (a) Chemical reaction for AlN drilled by nanosecond laser; (b) SEM image of hole cross-section on AlN
    Element content in different parts of hole exit on AlN by nanosecond laser processing (laser power of 8 W, repetition rate of 50 kHz, scanning speed of 20 mm/s, and repeat counts of 40)
    Relationship between nanosecond laser power and hole diameter (Al2O3 with thickness of 0.8 mm and repetition rate of 5 Hz)[50]
    Relationship between hole entrance diameter and scanning speed for nanosecond laser processing (Al2O3 with thickness of 0.12 mm, laser power of 8 W, and repetition rate of 50 kHz)
    Influence of nanosecond laser processing parameters on etching depth of Al2O345. (a) Laser fluence;
    Relationship between shot number and ablation depth (Al2O3 with thickness of 0.6 mm and laser fluence of 600 J/cm2)[51]
    Relationship between laser power and hole taper(Al2O3 with thickness of 0.12 mm, repetition rate of 50 kHz, and repeat counts of 100)
    • Table 1. Chemical decomposition process of Al2O3 and AlN during millisecond laser processing

      View table

      Table 1. Chemical decomposition process of Al2O3 and AlN during millisecond laser processing

      MaterialStepChemical equationNote
      Process 1Al2O3→Al+AlO+AlO2+Al2OThe temperature rises to about 3250 K
      Al2O3Process 2AlO→Al+O2AlO2→Al+O2Al2O→Al+O2The temperature rises to about 5000 K
      Total reaction2Al2O3=4Al+3O2The gas phase material generates recoilpressure to spurt material out
      AlNProcess 1(oxygenenvironment)4AlN+3O2=2Al2O3+2N2High temperature and high pressurepromote the oxidation reaction of aluminum nitride,and the local temperature rises to about 1600 K
      Process 22AlN→2Al+N2The local temperature of the material rises to about 2800 K
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    Xuesong Mei, Zixuan Yang, Wanqin Zhao. Laser Hole Drilling on Surface of Electronic Ceramic Substrates[J]. Chinese Journal of Lasers, 2020, 47(5): 0500011

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    Paper Information

    Category: reviews

    Received: Jan. 18, 2020

    Accepted: Feb. 26, 2020

    Published Online: May. 12, 2020

    The Author Email: Wanqin Zhao (linazhaolinazhao@foxmail.com)

    DOI:10.3788/CJL202047.0500011

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