Microelectronics, Volume. 53, Issue 3, 372(2023)

A High Speed and High Bandwidth DAC on SiGe Technology

ZANG Jiandong1,2, YANG Weidong1,2, LI Jing2, ZHANG Shili2, and LIU Jun1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [1] [1] VAN DE SANDE F, LUGIL N, DEMARSIN F, et al. A 72 GSa/s, 14 bit or 12 GSa/s, 12 bit signal generator on a chip in a 165 GHz BiCMOS process [J]. IEEE J Sol Sta Circ, 2012, 47(4): 1003-1012.

    [2] [2] DRENSKI T, RASMUSSEN J C. ADC&DAC -Technology trends and steps to overcome current limitations [C] // Optical Fiber Communications Conference and Exposition(OFC). San Diego, USA. 2018: 1-3.

    [3] [3] LIN C H, VAN DER GOES F M L, JAN WESTRA R, et al. A 12 bit 29 GSs DAC with IM3 < -60 dBc beyond 1 GHz in 65 nm CMOS [J]. IEEE J Sol Sta Circ, 2009, 44(12): 3285-3293.

    [4] [4] SCHMID R L, ULUSOY A , ZEINOLABEDINZADEH S. A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies [J]. IEEE Trans Electron Devices, 2015, 62(6): 1803-1810.

    [5] [5] MCMAHILL D R, HURTA D S, BRANDT B, et al. A 160 channel QAM modulator with 46 Gsps 14 bit DAC [J]. IEEE J Sol Sta Circ, 2014, 49(12): 2878-2890.

    [6] [6] RCKER H, HEINEMANN B. Device architectures for high-speed SiGe HBTs [C] // IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Nashville, TN, USA. 2019: 1-7.

    [7] [7] PALMERS P, WU X, STEYAERT M. A 130 nm CMOS 6-bit full Nyquist 3GS/s DAC [C] // IEEE Asian Solid-State Circuits Conference. Jeju, Korea (South). 2007: 12-14.

    [8] [8] LI W Z, ZHOU L, XUE D J, et al. 8GSps 6bit DAC in 0.18 μm SiGe technology [C] //IEEE International Wireless Symposium (IWS 2015). Shenzhen, China. 2015: 1-4.

    [9] [9] GLASCOTT-JONES A, WINGENDER M, BORE F, et al. Using e2v’s high speed space grade ADC and DAC to achieve direct conversion of L band signals [C] // 12th International Radar Symposium(IRS). Leipzig, Germany. 2011:829-834.

    [10] [10] VOINIGESCU S. High frequency integrated circuits [M]. New York: Cambridge University Press, 2013: 731-738.

    [11] [11] MOLLER M. Challenges in the cell-based design of very-high-speed SiGe-bipolar ICs at 100 Gb/s [J]. IEEE J Solid-State Circ,2008, 43(9): 1877-1888.

    [12] [12] LI Y C, SCHAFFERER B. Mixer/DAC chip and method [P]. US: 0224908A1, Sep.18, 2008.

    [13] [13] CHOE M J, BAEK K H, TESHOME M. A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation [J]. IEEE J Sol-Sta Circ, 2005, 40(12): 2456-2468.


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    ZANG Jiandong, YANG Weidong, LI Jing, ZHANG Shili, LIU Jun. A High Speed and High Bandwidth DAC on SiGe Technology[J]. Microelectronics, 2023, 53(3): 372

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    Paper Information


    Received: Sep. 2, 2022

    Accepted: --

    Published Online: Jan. 3, 2024

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