Chinese Journal of Lasers, Volume. 51, Issue 11, 1101024(2024)

Research Progress of Ultra‑High Density Optical Storage

Hao Ruan1、*, Qiao Hu1,2, and Miao Zhao1
Author Affiliations
  • 1Photonic Integrated Circuits Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(11)
    200-layer 3D optical storage based on two-photon absorption[11]. (a) Experimental system used for data recording; (b) confocal scanning results in xy and xz directions
    Examples of four-dimensional optical storage. (a) Recording of three kinds of pattern “X”, “Y”, and “Z” in the same portion[15] (polarization angles of the recording beam are 0°, 60°, and 120°, respectively); (b) erasure of 3×3 lattices at the center with the horizontal polarization light, then rewrite with the vertical polarization light[15]; (c) three-layer data storage with two polarization states achieved using two-photon absorption, where the letters “I” and “J” encoded in the same region in the second layer are completely erased and rewritten as letters “F” and “E”[16]; (d) ultrafast laser-induced liquid nanophase separation in the Br-and I- doped glass[19]; (e) multicolor patterns are generated in the glass by adjusting parameters during writing[19]
    Multidimensional optical storage based on surface plasmon in gold nanorods. (a) Photothermal reshaping of gold nanorods through polarization and wavelength selective absorption[21]; (b) 18 images stored in the same area using three different laser wavelengths and two laser polarization states[21]; (c) schematic of OAM-based six-dimensional optical storage encoding and decoding[25]
    Five-dimensional (5D) optical storage based on nanogratings. (a) Scanning electron microscopy (SEM) images of nanostructures under different pulse numbers[26]; (b) schematic of data recording setup[29]; (c) 100-layer error-free 5D optical storage[37]
    Far-field superresolution optical storage technology. (a) Realizing superresolution optical storage using the pupil-plane filter[45]; (b) superresolution recording by focusing radially polarized beams with a annular objective lens, where γ=d1/d2 is defined as the ratio of inner to outer radii[47]; (c) relationship between the maximum capacity of a single disk and the feature size of the recorded bits, where the inset illustrates the principle underlying SPIN’s ability to achieve superresolution recording[2]; (d) feature size of free-standing lines varies with the intensity of the inhibition beam, with a minimum value of 9 nm[53]
    Using rsEGFP to achieve superresolution optical storage[54]. (a) Diagram of optical writing steps; (b) experimental recording results
    Superresolution parallel reading and writing systems. (a) 3D parallelized recording through a volumetric superresolved multifocal array generated by SLM[55]; (b) multibeam parallel superresolution laser direct writing system based on rotary mirror scanning[56-58]
    Using elastic substrates to reduce pixel pitch in dual-beam superresolution storage[61]. (a) Schematic diagram of writing on pre-stretched PDMS substrate; (b) SEM image of pixel pitch array on PDMS substrate with 30% stretching ratio; (c) SEM images of pixel pitch array on normal PDMS substrate; (d) a leaf-shape nanodot pattern with average pixel spacing of 96 nm and single-dot size of 34 nm
    Dual-beam superresolution technology based on upconversion resonance energy transfer (RET)[62]. (a) Principle of nanoscale optical storage, where 980 nm writing beam induces GO reduction through RET of high-energy quanta from UCNPs, while the 808 nm inhibition beam inhibits GO reduction through suppression of high-energy quantum generation in UCNPs; (b) readout results without (left) and with (right) inhibition beam; (c) intensity profiles along the dashed lines in the insets of (b)
    Ultra-high density optical storage based on AIE-doped polymer [64-66]. (a) Change of fluorescence intensity of TPE with water content, where the percentage in the picture represents the water content[64]; (b) TPE solid state thin film under UV lamp irradiation[64]; (c) readout result of nine layers, with a spacing of 1.5 μm between adjacent points and an interval of 2 μm between different layers[65];(d) writing and reading principle of superresolution 3D disk based on AIE-DDPR, where the illustration shows the readout results of 100 layers, and the minimum spot size and the lateral distance between two adjacent spots are 54 nm and 70 nm, respectively[66];(e) the storage capacity of a single superresolution 3D disk is approximately equivalent to that of a petabit-level blu-ray library or an HDD data array[66]
    • Table 1. Performance of typical ultra-high density data storage technologies

      View table

      Table 1. Performance of typical ultra-high density data storage technologies

      MaterialStorage density

      Equivalent

      capacity

      Dot size /nmTrack pitch /nm

      Layer spacing /

      µm

      Lifetime

      Writing

      speed

      Original bit error rateRemark

      AD disc

      oxidized film3

      49.1 Gb/inch2500 GB320>50 years375 MB/s<6×10-46 layers on double sides

      Photoacid

      and dye11

      ~1 Tb/cm31 TB800575 Mb/s<1×10-5200 layers
      Sm3+‒Sm2+[181 Tb/cm3~1 Tb20015023D
      GNR211.1 Tb/cm31.6 Tb7501.33~1010 layers, 5D
      Glass37350 GB200017.5

      >A trillion

      years

      8 kB/s6×10-3100 layers, 5D
      LiNbO34024 TB500

      >A trillion

      years

      125 MB/s~3×10-3Single pulse, 5D
      rsEGFP5420 Tb/cm3~1 Tb200<48 h3.7×10-61 layer

      PDMS and

      photoresist61

      ~20 TB3496~0.2<1 kb/s3 layers, readout through AFM
      UCNPs62~40 Gb/inch2~2 Tb54192

      A few

      centuries

      <1 b/s
      Our AIE-DDPR6626 Tb/inch2~1.6 Pb54701>40 years<1 kb/s3.3×10-3200 layers on double sides
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    Hao Ruan, Qiao Hu, Miao Zhao. Research Progress of Ultra‑High Density Optical Storage[J]. Chinese Journal of Lasers, 2024, 51(11): 1101024

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 21, 2023

    Accepted: Mar. 4, 2024

    Published Online: Jun. 3, 2024

    The Author Email: Ruan Hao (ruanhao@siom.ac.cn)

    DOI:10.3788/CJL231559

    CSTR:32183.14.CJL231559

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