Laser & Optoelectronics Progress, Volume. 61, Issue 19, 1913005(2024)

Progress and Applications of Heterogeneously Integrated Lasers (Invited)

Zheng Li*, Mingfei Liu, and Chao Xiang
Author Affiliations
  • Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, China
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    Figures & Tables(9)
    Comparison of process flow for several laser integration methods with Si PICs[19]
    Ⅲ-Ⅴ/Si/SiN multilayer heterogeneously integrated laser[48]. (a) Process flow of multilayer heterogeneous integration; (b) schematic of the structure; (c) comparison of temperature stability; (d) noise performance
    Ⅲ-Ⅴ/Si/SiN fully heterogeneous integrated E-DBR laser[49]. (a) Process flow of fully heterogeneous integration; (b) top-view schematic illustration of the E-DBR laser; (c) three different operating states of Ⅲ-Ⅴ/Si/SiN fully integrated laser
    Heterogeneously integrated tunable lasers. (a) Schematic of integrated coherent tunable laser with ultra-wideband wavelength tuning and sub-100 Hz Lorentzian linewidth (left), various high-resolution integrated coherent tunable laser spectra (right)[73]; (b) broadband tunable laser array construction including entire low-loss fiber telecommunication window (left), optical spectra of the E-band laser tuned from 1350 nm to 1408 nm with SMSR greater than 50 dB (right) [74]; (c) schematic of the integrated mode-hop-free tunable heterogeneously integrated laser (left), calibration results of the mode-hop-free tuning algorithm (right) [75]
    3D integration enables ultralow-noise isolator-free lasers in silicon photonics[27]. (a) Concept of 3D photonic integration (top left) and physical diagram of fabricated 3D PIC (bottom left), cross-section of the demonstrated 3D PIC, and expected additional EIC integration to be achieved in future work (right); (b)frequency noise of the laser output taken from the through port and drop port of the ring resonator; (c) frequency noise of the drop port at the self-injection locking condition under different on-chip feedback levels
    Laser soliton microcombs are heterogeneously integrated on silicon[81]. (a) Schematic of laser soliton microcomb devices consisting of DFB lasers, phase tuners, and high-Q microring resonators; (b) optical spectra of different soliton states
    Microwave signal generation based on heterogeneously integrated lasers. (a) Schematic of widely tunable microwave-signal generation[27]; (b) schematic design of a photonic microwave oscillator on a single chip with ultra-low phase noise[113]
    Electronic-photonic integrated circuits based on heterogeneously integrated laser. (a) Schematic of 3D electronic-photonic heterogeneous integration[27]; (b) interconnect distances and electrical wiring length dependence for connectivity solutions[95]
    • Table 1. Advantages and disadvantages of common integrated laser technologies

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      Table 1. Advantages and disadvantages of common integrated laser technologies

      Types of integrated laserAdvantageDisadvantage
      Hybrid integrationInter-chipGuaranteed yield before integrationSlow integration process, high alignment requirement
      Flip-chipGuaranteed yield before integration, relatively high integration density, good stability and thermal management25Slow integration process, higher alignment requirement
      Heterogeneous integrationBCB bondingLow cost, easy process; low thermal stress, no critical cleanness requirementBad heatsinking
      Metal bondinglow thermal stress, no critical cleanness requirement, superior electrical performance37Strong absorption of light
      Direct bondingHigh coupling efficiency, low packaging complexity and cost, potential for large-scale manufacturing28Low thermal budget; critical cleanness requirement
      Micro-transfer printingGuaranteed yield before integration, potential for large-scale manufacturing38High precision requirement for alignment equipment
      Monolithic integrationMQW-basedLow costHigh non-radiative recombination rate, limited efficiency and lifetime39
      QD-basedLow cost, improved tolerance to defects, low transparency current density, high-temperature operation40Low active-passive coupling efficiency
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    Zheng Li, Mingfei Liu, Chao Xiang. Progress and Applications of Heterogeneously Integrated Lasers (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913005

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    Paper Information

    Category: Integrated Optics

    Received: Aug. 2, 2024

    Accepted: Aug. 15, 2024

    Published Online: Oct. 21, 2024

    The Author Email:

    DOI:10.3788/LOP241786

    CSTR:32186.14.LOP241786

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