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Journal of Semiconductors, Volume. 40, Issue 1, 010101(2019)

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Xutang Tao1, Jiandong Ye2, Shibing Long3, and Zhitai Jia4
Author Affiliations
  • 1Shandong University, Jinan, 250100, China
  • 2Nanjing University, Nanjing, 210023, China
  • 3University of Science and Technology of China, Hefei, 230026, China
  • 4Shandong University, Jinan, 250100, China
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    Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia. Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices[J]. Journal of Semiconductors, 2019, 40(1): 010101

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    Paper Information

    Category: Editorial

    Received: --

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/1/010101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology