Tungsten disulfide (WS2) has a wide application prospect in the field of optoelectronic devices due to its properties such as tunable band gap, strong light-matter interaction and high carrier mobility and so on. Dendritic WS2/monolayer WS2 was grown on SiO2/Si substrate by atmospheric pressure chemical vapor deposition (CVD). Sulphur powder and transition metal oxides were used as precursors. The morphological evolution of the samples on the substrate was divided into four regions: superimposed growth region (Ⅳ), dendritic WS2 growth region (Ⅲ), hexagonal WS2 growth region (Ⅱ) and no obvious morphological region (Ⅰ). The differences in the number, morphology, structure and properties of the prepared dendritic WS2/monolayer WS2 on the substrates were systematically compared by optical microscopy, atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, scanning electron microscopy and other testing methods. It is found that the morphology of the dendritic WS2 affects the actual defect concentration, thus affects the position of the Raman characteristic peaks. The growth mechanism of the morphological evolution was explained by the atomic adsorption model and the variation of the S and W vapor ratio. In addition, back-gated field effect transistor (FET) based on dendritic WS2/monolayer WS2 homojunction with a responsivity of 46.6 mA/W is prepared, and its response and recovery time are in the microsecond range, showing its superior performances than the monolayer WS2-FET prepared by CVD. This work will help to further understand the controlled growth of two-dimensional thin film materials and contribute to the preparation of large-area, high-quality dendrite structures.