Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini; Hassan Kaatuzian; Iman Taghavi

doi:10.3788/COL201715.062501

Chinese Optics Letters, Volume. 15, Issue 6, 062501(2017)

Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini¹, Hassan Kaatuzian^1、*, and Iman Taghavi²

¹Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran 15914, Iran

²Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, 30332, USA

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Figures & Tables(7)

Fig. 1. Schematic energy band diagram of (a) the primary TL proposed by Feng and Holonyak^[3] (first structure), (b) first proposed GRIN-SCH structure, (second structure), and (c) second proposed GRIN-SCH structure (third structure) under forward bias. Slope of the band diagram in SCH1 and SCH2, which determines the magnitude of the quasi-electric field.

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Fig. 2. Calculated minority electron distribution for (a) the first proposed GRIN-SCH structure and (b) the second proposed GRIN-SCH structure. (a) is in good agreement with the calculated carrier population for the GRIN-SCH QW laser^[14], and (b) also complies with the results of graded base HBTs^[4].

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Fig. 3. Calculated dc gain $β_{dc} (I_{C} / I_{B})$ . The dc current gain reduces significantly, when the second structure is employed, because of the funnel form of this structure.

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Fig. 4. Calculated optical output power P.

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Fig. 5. Optical frequency response for the original and proposed GRIN-SCH structures. The $- 3 dB$ bandwidth of the original TL (first structure) is $\sim 19.5 GHz$ , and for the second and third structures they are 21 and 20 GHz, respectively.

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Fig. 6. Confinement structure dependency: (a) electrical and (b) optical characteristics of the SQW TL.

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Table 1. Calculated Physical Parameters for All Three Structures

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Table 1. Calculated Physical Parameters for All Three Structures

					Structure
Device Parameter		Symbol	Unit	Calculation Approach Ref.	1st	2nd	3rd
Effective minority electron mobility	SCH1	$μ_{1}$	${cm}^{2} / Vs$	[12]	1068	964.7	919.325
	SCH2	$μ_{2}$	${cm}^{2} / Vs$	[12]	1068	1014.05	1014.05
Diffusion constant	SCH1	$D_{1}$	${cm}^{2} / s$	[4]	27.61	24.88	23.71
	SCH2	$D_{2}$	${cm}^{2} / s$	[4]	27.61	26.16	26.16
Quasi-electric field	SCH1	$ε_{1}$	V/cm	[4]	0	$1.22 \times 10^{4}$	$1.22 \times 10^{4}$
	SCH2	$ε_{2}$	$V / cm$	[4]	0	$1.18 \times 10^{4}$	$1.18 \times 10^{4}$
Effective recombination lifetime	SCH1	$τ_{B 1}$	ps	[9]	201	220	243
	SCH2	$τ_{B 2}$	$ps$	[9]	201	210	210
Optical confinement factor		$Γ$	%	[9]	5.82	5.65	5.51
Optical loss		$α_{i}$	${cm}^{- 1}$	[9]	20.14	19.56	19.07
Photon lifetime		$τ_{p}$	ps	[9]	2.57	2.59	2.61
Electron capture time		$τ_{cap}$	ps	[9]	0.90	0.56	0.57

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Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi, "Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures," Chin. Opt. Lett. 15, 062501 (2017)

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Paper Information

Category: Optoelectronics

Received: Oct. 31, 2016

Accepted: Feb. 24, 2017

Published Online: Jul. 20, 2018

The Author Email: Hassan Kaatuzian (hsnkato@aut.ac.ir)

DOI:10.3788/COL201715.062501

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology