Fig. 1. Doping profile of As concentration in the infrared-active layer by four-different-energy ion-implanted scheme

Fig. 2. Schematic process flow of the ion-implanted BIB detector

Fig. 3. （a）BIB detector’s partial enlarged detail and（ b）package of BIB detector

Fig. 4. Blackbody responsivity vs bias voltage at 5 K

Fig. 5. Dark current vs bias voltage at 5 K

Fig. 6. D* vs bias voltage at 5 K

Fig. 7. PC spectrum at 5 K