Study On Optical Communications, Volume. 51, Issue 2, 240016-01(2025)
Heterogeneous Integrated III-V-on-SOI Photodetector Using Micro-transfer Printing Method
Figures & Tables(9)
Fig. 1. Interfaces and interface energy release rate in micro-transfer printing process
Fig. 2. The structure model of APD and SOI grating coupler after integration
Fig. 4. The schematic diagram of the device before and after integration
Fig. 5. Testing the integrated heterogeneous integrated photodetectors
Fig. 6. Dark current curve and normalized bandwidth response curve of APD before/after micro-transfer printing integration
Fig. 7. Responsibility test results of APD under different optical power conditions before/after micro-transfer printing integration
Fig. 8. Calculation of responsivity ratio curve before/after micro-transfer printing integration
Table 1. The responsivity of APD before/after micro-transfer printing integration (@-25 V)
View tableView in ArticleTable 1. The responsivity of APD before/after micro-transfer printing integration (@-25 V)
响应度 入射光功率Pin/mW 净光生电流（Iph-Id）/mA 响应度R/A·W-1 集成前APD 光纤-上光敏面直接耦合响应度R1 4.0×10-1 3.3×10-1 8.3×10-1 集成后器件 计入耦合损耗的响应度R2 4.0×10-1 -3 7.3×10-3 排除耦合损耗的响应度R2* 1.6×10-1 2.9×10 1.8×10-2
Tools
Get Citation
Copy Citation Text
Zhaocong WANG, Zhiheng QUAN, ShiGuanqing ZHENG, Yan ZHU, Nan YE, Liangjun LU, Linjie ZHOU, Yingxiong SONG. Heterogeneous Integrated III-V-on-SOI Photodetector Using Micro-transfer Printing Method[J]. Study On Optical Communications, 2025, 51(2): 240016-01
Paper Information
Category:
Received: Jan. 23, 2024
Accepted: --
Published Online: May. 22, 2025
The Author Email: Nan YE (aslanye@shu.edu.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20