Fig. 1. (a) 3D schematic of the DO-MZM; (b) simulated optical field of the TE mode and electric field distribution in the modulation region; (c) simulated S-parameter of the designed CPW.

Fig. 2. (a) Top view of the device with two input and output ports; (b) simulated optical field distribution of the 2 × 2 MMI; (c) 3D schematic of the cross section of 6.5 µm mode field diameter SSC, SiON CLWG: SiON cladding waveguide; (d) 3D schematic of the SSC; (e) simulated wavelength and loss curve of the SSC; (f) simulated optical field of the TE mode distribution in the SSC. C1 to C4: the cross section of different parts in the SSC.

Fig. 3. The microscope image of details in the DO-MZM; (a) cross section of the SSC; (b) MMI; (c) overall photograph of the DO-MZM; (d) optical micrograph of the wire-bonded pad and ceramic transmission lines; (e) photograph of the packaged DO-MZM device.

Fig. 4. (a) The voltage-loss curve of the device; (b) voltage-power curve of the DO-MZM under DC bias and the spectrum of 2 × 2 MMI; (c) measured S-parameter curve of the DO-MZM chip; (d) S-parameter curve of the device after packaging.

Fig. 5. (a) The schematic of the CMMR measurement setup; (b) power output of the DO-MZM when the BPD is connected to port 01; (c) power output of the DO-MZM when the BPD is connected to port 02; (d) power output of the DO-MZM when the BPD is connected to both 01 and 02 ports. LD, laser diode; VOA, variable optical attenuator; EDFA, erbium-doped optical fibr amplifier; DO-MZM, dual-output MZM; OTDL, optical true time delay line; BPD, balanced photodetector; ESA, electronic spectrum analyzer.