High Power Laser and Particle Beams, Volume. 36, Issue 1, 013008(2024)

Power pulse sharpening technology based on silicon carbide plasma devices

Dengyao Guo1, Xiaoyan Tang1, Qingwen Song1、*, Yu Zhou1,2, Jingkai Guo1, Lejia Sun1, Hao Yuan1, Fengyu Du1,2, and Yuming Zhang1
Author Affiliations
  • 1School of Microelectronics, Xidian University, Xi’an 710071, China
  • 2Xidian-Wuhu Research Institute, Wuhu 241002, China
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    Figures & Tables(8)
    Structure diagram and breakdown characteristics of DSRD and DAS in the simulation
    DSRD based pulse sharpening circuit (red and blue frames are not connected simultaneously)
    Pulse sharpening circuit based on DSRD and DAS (red and green frames are not connected simultaneously)
    Changes of some key physical quantities during DSRD shutdown, where t1=66.39 ns; t2 = 67.54 ns;t3 = 67.84 ns
    Changes of some key physical quantities during DAS triggering, where t1=67.514 ns; t2=67.823 ns; t3=67.858 ns; t4=68.006 ns
    Output pulse of silicon carbide DAS under different circuit conditions in the experiment
    Sharpening effect of silicon carbide plasma pulse power devices on electrical pulses
    • Table 1. Circuit component parameters used for simulation

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      Table 1. Circuit component parameters used for simulation

      R1R2C1/nFC2/nFC3/nFC4/pFL1/nHL2/nHL3/μHL4/μH
      5010000.2223807522
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    Dengyao Guo, Xiaoyan Tang, Qingwen Song, Yu Zhou, Jingkai Guo, Lejia Sun, Hao Yuan, Fengyu Du, Yuming Zhang. Power pulse sharpening technology based on silicon carbide plasma devices[J]. High Power Laser and Particle Beams, 2024, 36(1): 013008

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    Paper Information

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    Received: Jul. 4, 2023

    Accepted: Dec. 1, 2023

    Published Online: Mar. 21, 2024

    The Author Email: Qingwen Song (qwsong@xidian.edu.cn)

    DOI:10.11884/HPLPB202436.230209

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