Photonics Research, Volume. 5, Issue 6, 702(2017)
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform
Fig. 1. Schematic of bonding and layer transfer technique for GOI
Fig. 2. (a) SIMS doping profiles of B and As in Ge vertical
Fig. 3. (a) Cross-sectional schematic of a GOI vertical
Fig. 4. (a) Dark current density-voltage characteristic of GOI vertical
Fig. 5. (a) Photocurrent of a GOI vertical
Fig. 6. Performance comparison of Ge-based PDs.
Fig. 7. (a) Frequency response of GOI vertical
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Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan, "High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform," Photonics Res. 5, 702 (2017)
Category: Photodetectors
Received: Aug. 14, 2017
Accepted: Sep. 18, 2017
Published Online: Dec. 7, 2017
The Author Email: Chuan Seng Tan (tancs@ntu.edu.sg)