[1] [1] F. Machuca,Y. Sun,Z. Liu et al.. Prospect for high brightness III-nitride electron emitter [J]. J. Vac. Sci. Technol. B,2000,18(6):3042-3046

[2] [2] Zhi Liu,Francisco Machuca,Piero Pianetta et al.. Electron scattering study within the depletion region of the GaN(0001) and the GaAs (100) surface [J]. Appl. Phys. Lett.,2004,85(9):1541-1543

[3] [3] O. Siegmund,J. Vallerga,J. Mcphate et al.. Development of GaN photocathodes for UV detectors [J]. Nucl. Instrum. Meth. A,2006,567(1):89-92

[4] [4] J. Stock,G. Hilton,T. Norton et al.. Progress on development of UV photocathodes for photon-counting applications at NASA GSFC [C]. SPIE,2005,5898:106-109

[5] [5] M. P. Ulmera,B. W. Wesselsb,B. Hanb et al.. Advances in wide-band-gap semiconductor based photocathode devices for low light level applications [C]. SPIE,2003,5164:144-154

[6] [6] Du Xiaoqing,Chang Benkang. Angle-dependent X-ray photoelectron spectroscopy study of the mechanisms of "high-low temperature" activation of GaAs photocathode [J]. Appl. Surf. Sci.,2005,251(1-4):267-272

[7] [7] Zou Jijun,Chang Benkang,Yang Zhi et al.. Evolution of surface potential barrier for negative-electron-affinity GaAs photocathodes [J]. J. Appl. Phys.,2009,105(1):48-52

[8] [8] Zou Jijun,Chen Huailin,Chang Benkang et al.. study of relation between surface electron escape probability of GaAs photocathode and incident photon wavelength [J]. Acta Optica Sinica,2006,26(9):1400-1403

[9] [9] C. I. Wu,A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces [J]. Appl. Surf. Sci.,2000,162-163:250-255

[10] [10] Zou Jijun,Gao Pin,Yang Zhi et al.. Low temperature desorption and activation of GaAs photocathode [J]. Chinese Journal of Vacuum Science and Technology,2007,27(3):222-225

[11] [11] Zou Jijun,Chang Benkang,Yang Zhi et al.. Stability of GaAs photocathodes under different intensities of illumination [J]. Acta Physica Sinica,2007,56(10):6109-6113

[12] [12] Du Xiaoqing,Chang Benkang,Qian Yunsheng et al.. Measurement and analysis of spectral response characteristic of transmission-mode GaAs photocathode before and after indium seal [J]. Acta Optica Sinica,2006,26(4):536-540

[13] [13] Liu Cheng,Wu Huizhen,Lao Yangfeng et al.. Optical properties of p-type GaAs in far-infrared region [J]. Acta Optica Sinica,2006,26(2):221-224

[14] [14] Lou Shuangling,Yu Junsheng,Li Weizhi et al.. Organic light-emitting devices based on novel hole transport layer [J]. Acta Optica Sinica,2007,27(8):1455-1459

[15] [15] Chen Yanan,Li Weihua. Li Ming. Drive laser for the FEL radio fequency photoinjector [J]. Chinese J. Lasers,2006,33(s):160-162

[16] [16] Zhong Gaoyu,Zhou Suyun,Chen Guanyu et al.. An invalidation mechanism in organic light-emitting diodes [J]. Chinese J. Lasers,2008,35(1):35-38