Fig. 1. Schematic of the photonic SHE of a beam upon reflection of a GWSPR configuration. δ+ and δ− indicate the transverse displacements for left- and right-circular polarization components, respectively.

Fig. 2. Dependences of transverse beam shifts on the metal film thickness and the incident angle with d3=0: (a) H-polarization state; (b) V-polarization state.

Fig. 3. Dependences of the Fresnel reflectance Rs and Rp on the incident angle with the different thickness of silicon, where the silicon film thickness (dsi=d3) is fixed to the three values: 0, 8, and 12 nm, when d2=46  nm.

Fig. 4. (a) Relation of minimum value of rp and incident angle at the minimum value of rp with the thickness of the Si film. (b) Value of |rs/rp| changing with the incident angles under the Si film thickness are fixed to four values: 8, 10, 12, and 14 nm, where d2=46  nm.

Fig. 5. Photonic SHE in GWSPR model for H- and V-polarization state; we show the spin-dependent splitting varying with the incident angles under d2=46  nm. Here, we choose three different thicknesses: (a) 0 nm; (b) 8 nm; (c) and the optimal thickness 12 nm.

Fig. 6. Dependence of the displacements (a) H-polarization state and (b) V-polarization state on the incident angle and the thickness of Si.