OPTICS & OPTOELECTRONIC TECHNOLOGY, Volume. 19, Issue 1, 42(2021)

Simulation Design and Linewidth Test on Narrow Linewidth Semiconductor Laser Device

ZHANG Lei
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  • [in Chinese]
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    References(5)

    [10] [10] T P Nguyen. Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission [J]. Applied Physics B, 2012, 108(4): 767-771.

    [11] [11] S S Sané. 11 W narrow linewidth laser source at 780nm for laser cooling and manipulation of Rubidium [J]. Optics Express, 2012, 20(8): 8915-8919.

    [12] [12] Daniel J Thompson, Robert E Scholten. Narrow linewidth tunable external cavity diode laser using wide bandwidth filter [J]. Review of Scientific Instruments, 2012, 83: 023107.

    [13] [13] Max Schiemangk, High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments [J]. Applied Optics, 2015, 54(17): 5332-5338.

    [14] [14] H Wenzel. High-power 980-nm DFB RW lasers with a narrow vertical far field [J]. IEEE Photonics Technology Letters, 2006, 18(6): 737-739.

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    ZHANG Lei. Simulation Design and Linewidth Test on Narrow Linewidth Semiconductor Laser Device[J]. OPTICS & OPTOELECTRONIC TECHNOLOGY, 2021, 19(1): 42

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    Paper Information

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    Received: Aug. 25, 2020

    Accepted: --

    Published Online: Aug. 19, 2021

    The Author Email:

    DOI:

    CSTR:32186.14.

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