Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy

HU Jichao; ZHAO Qiyang; YANG Zhihao; YANG Ying; PENG Bo; DING Xiongjie; LIU Wei; ZHANG Hong

doi:10.16553/j.cnki.issn1000-985x.2024.0305

Journal of Synthetic Crystals, Volume. 54, Issue 3, 452(2025)

Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy

HU Jichao¹, ZHAO Qiyang¹, YANG Zhihao¹, YANG Ying¹, PENG Bo², DING Xiongjie³, LIU Wei³, and ZHANG Hong³

Author Affiliations

¹School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China

²Faculty of Integrated Circuit, Xidian University, Xi'an 710071, China

³Guangdong TYSiC Semiconductor Co. Ltd., Dongguan 523808, China

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HU Jichao, ZHAO Qiyang, YANG Zhihao, YANG Ying, PENG Bo, DING Xiongjie, LIU Wei, ZHANG Hong. Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy[J]. Journal of Synthetic Crystals, 2025, 54(3): 452

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Paper Information

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Received: Dec. 2, 2024

Accepted: Apr. 23, 2025

Published Online: Apr. 23, 2025

The Author Email:

DOI:10.16553/j.cnki.issn1000-985x.2024.0305

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology