Fig. 1. HRXRD ω-2θ scan for symmetric (004) plane of different energies Si implanted InAs, GaSb and after annealing：（a）Before and after different energy Si is injected into GaSb；（b）Before and after different energy Si is injected into InAs；（c）After annealing of GaSb material implanted with different energy Si；（d）The variation of strain degree in InAs，GaSb and superlattices with Si implantation energy

Fig. 2. HRXRD ω-2θ scan for symmetric (004) plane of different energies Si implanted InAs/GaSb type-II superlattice and after annealing：（a）Comparison of Si implanted into superlattice with different energies before and after implantation；（b）Comparison of superlattice implanted with Si of different energies after annealing and before implantation；（c）The degree of mismatch before and after superlattice annealing changes with the injection energy；（d）Variation of the FWHM of the positive and negative first-order satellite peak with the injected energy

Fig. 3. Two-dimensional point map of reciprocal space of superlattices before and after Si ion implantation and annealing：（a）Before superlattice material Si injection；（b）Superlattice injected with 100keV Si；（c）Superlattice injected with 200keV Si；（d）Superlattice annealed after implantation of 200keV Si

Fig. 4. Photoluminescence spectra of superlattice and GaSb at 77k：（a）Superlattice with different energy Si implantation and annealing；（b）Superlattice after 200 keV silicon implantation and annealing

Fig. 5. Depth and electrical properties of Si implanted superlattice：（a）Two SIMS test results and SRIM simulation results of Si superlattice with injected energy of 10 keV；（b）The relationship between injected energy and carrier concentration and mobility