Infrared and Laser Engineering, Volume. 51, Issue 10, 20220036(2022)

Adjustable narrow pulse laser drive circuit using GaN HEMT

Shixuan Yang1,2, Baiqin Zhao1、*, Lijing Wang3, and Ning Wang1,2
Author Affiliations
  • 1Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China
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    Figures & Tables(11)
    Cross-section view of device structure
    Output characteristic curve
    Circuit structure and simulation. (a) Common drain circuit; (b) Source voltage simulation results
    Driver circuit on PCB
    Test system
    Output optical waveforms. (a)-(f) Waveforms displayed by an oscilloscope; (g) Waveforms drawn from the derived data
    [in Chinese]
    Circuit widening output light pulse width
    Output optical waveforms
    Schematic diagram of integrated process structure
    • Table 1. Comparison table

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      Table 1. Comparison table

      Ref. [4] Ref. [6] Circuit 2 of this work
      TopologyCMOS gate driver + Si switch CMOS gate driver + Si switch GaN HEMT + Si PMOS + GaN switch
      Gate driver ICYesYesNo
      Pulse width/ns50-500>160>8.4
      Peak power/W3018>46
      Die size/mm25×55×5<3.4×2.4(Expected integration area)
      Total size/mm2N/AN/A13×11
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    Shixuan Yang, Baiqin Zhao, Lijing Wang, Ning Wang. Adjustable narrow pulse laser drive circuit using GaN HEMT[J]. Infrared and Laser Engineering, 2022, 51(10): 20220036

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    Paper Information

    Category: Lasers & Laser optics

    Received: Jan. 11, 2022

    Accepted: Feb. 23, 2022

    Published Online: Jan. 6, 2023

    The Author Email: Zhao Baiqin (bqzhao@semi.ac.cn)

    DOI:10.3788/IRLA20220036

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