Photonics Research, Volume. 9, Issue 6, 1117(2021)
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
[1] J. Mellqvist, H. Axelsson, A. Rosén. DOAS for flue gas monitoring—III.
[2] J. Hodgkinson, R. P. Tatam. Optical gas sensing: a review. Meas. Sci. Technol., 24, 012004(2013).
[3] M. Degner, H. Ewald. UV emitters in gas sensing applications. III-Nitride Ultraviolet Emitters, 321-349(2016).
[4] F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, M. Kneissl. Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs. IEEE J. Sel. Top. Quantum Electron., 23, 29-36(2017).
[5] M. Kneissl, T.-Y. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics, 13, 233-244(2019).
[6] H. Amano, R. Collazo, C. D. Santi, S. Einfeldt, M. Funato, J. Glaab, S. Hagedorn, A. Hirano, H. Hirayama, R. Ishii, Y. Kashima, Y. Kawakami, R. Kirste, M. Kneissl, R. Martin, F. Mehnke, M. Meneghini, A. Ougazzaden, P. Parbrook, S. Rajan, P. Reddy, F. Römer, J. Ruschel, F. Scholz, L. Schowalter, P. Shields, Z. Sitar, L. Sulmoni, T. Wang, T. Wernicke, M. Weyers, B. Witzigmann, Y.-R. Wu, T. Wunderer, Y. Zhang. The 2020 UV emitter roadmap. J. Phys. D, 53, 503001(2020).
[7] F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, M. Kneissl. Highly conductive n-Al
[8] L. Sulmoni, F. Mehnke, A. Mogilatenko, M. Guttmann, T. Wernicke, M. Kneissl. Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers. Photon. Res., 8, 1381-1387(2020).
[9] F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, M. Lapeyrade, S. Einfeldt, J. Rass, T. Wernicke, M. Weyers, M. Kneissl. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes. Appl. Phys. Lett., 105, 051113(2014).
[10] T. A. Henry, A. Armstrong, A. A. Allerman, M. H. Crawford. The influence of Al composition on point defect incorporation in AlGaN. Appl. Phys. Lett., 100, 043509(2012).
[11] R. G. Banal, M. Funato, Y. Kawakami. Optical anisotropy in [0001]-oriented Al
[12] M. Guttmann, F. Mehnke, B. Belde, F. Wolf, C. Reich, L. Sulmoni, T. Wernicke, M. Kneissl. Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm. Jpn. J. Appl. Phys., 58, SCCB20(2019).
[13] N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, M. Kneissl. Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs. Phys. Status Solidi A, 215, 1700643(2018).
[14] M. Jo, N. Maeda, H. Hirayama. Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer. Appl. Phys. Express, 9, 012102(2015).
[15] Y. Zhang, S. Krishnamoorthy, F. Akyol, S. Bajaj, A. A. Allerman, M. W. Moseley, A. M. Armstrong, S. Rajan. Tunnel-injected sub-260 nm ultraviolet light emitting diodes. Appl. Phys. Lett., 110, 201102(2017).
[16] S. Okawara, Y. Aoki, M. Kuwabara, Y. Takagi, J. Maeda, H. Yoshida. Nitride-based stacked laser diodes with a tunnel junction. Appl. Phys. Express, 11, 012701(2018).
[17] I. P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J. P. Ibbetson, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra. Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett., 76, 718-720(2000).
[18] C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, M. Kneissl. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs. Photon. Res., 7, B7-B11(2019).
[19] S. Zhao, S. M. Sadaf, S. Vanka, Y. Wang, R. Rashid, Z. Mi. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm. Appl. Phys. Lett., 109, 201106(2016).
[20] S. Rajan, T. Takeuchi. III-Nitride Tunnel Junctions and Their Applications(2017).
[21] A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, M. Weyers. Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN. Phys. Status Solidi B, 253, 809-813(2016).
[22] G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, R. W. Martin. Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N. Appl. Phys. Lett., 107, 072103(2015).
[23] F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Kneissl. Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm. Appl. Phys. Express, 12, 012008(2019).
[24] Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions. Jpn. J. Appl. Phys., 52, 08JK12(2013).
[25] B. B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo, Z. Sitar. Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN. Jpn. J. Appl. Phys., 56, 100302(2017).
[26] D. Takasuka, Y. Akatsuka, M. Ino, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki. GaInN-based tunnel junctions with graded layers. Appl. Phys. Express, 9, 081005(2016).
[27] Y. Akatsuka, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki. Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy. Appl. Phys. Express, 12, 025502(2019).
[28] Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, S. Rajan. Interband tunneling for hole injection in III-nitride ultraviolet emitters. Appl. Phys. Lett., 106, 141103(2015).
[29] Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, S. Rajan. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. Appl. Phys. Lett., 109, 121102(2016).
[30] Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, S. Rajan. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. Appl. Phys. Lett., 112, 071107(2018).
[31] S. Krishnamoorthy, F. Akyol, P. S. Park, S. Rajan. Low resistance GaN/InGaN/GaN tunnel junctions. Appl. Phys. Lett., 102, 113503(2013).
[32] S. Krishnamoorthy, F. Akyol, S. Rajan. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes. Appl. Phys. Lett., 105, 141104(2014).
[33] E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, J. S. Speck. Hybrid tunnel junction contacts to III-nitride light-emitting diodes. Appl. Phys. Express, 9, 022102(2016).
[34] M. Malinverni, D. Martin, N. Grandjean. InGaN based micro light emitting diodes featuring a buried GaN tunnel junction. Appl. Phys. Lett., 107, 051107(2015).
[35] V. F. Arcara, B. Damilano, G. Feuillet, S. Vézian, K. Ayadi, S. Chenot, J.-Y. Duboz. Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes. J. Appl. Phys., 126, 224503(2019).
[36] K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys. Appl. Phys. Lett., 86, 222108(2005).
[37] J. Glaab, J. Ruschel, F. Mehnke, M. Lapeyrade, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, M. Kneissl. Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes. Semicond. Sci. Technol., 33, 095017(2018).
[38] A. Yoshikawa, R. Hasegawa, T. Morishita, K. Nagase, S. Yamada, J. Grandusky, J. Mann, A. Miller, L. J. Schowalter. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm. Appl. Phys. Express, 13, 022001(2020).
[39] N. Lobo-Ploch, F. Mehnke, L. Sulmoni, H. K. Cho, M. Guttmann, J. Glaab, K. Hilbrich, T. Wernicke, S. Einfeldt, M. Kneissl. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates. Appl. Phys. Lett., 117, 111102(2020).
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Frank Mehnke, Christian Kuhn, Martin Guttmann, Luca Sulmoni, Verena Montag, Johannes Glaab, Tim Wernicke, Michael Kneissl, "Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm," Photonics Res. 9, 1117 (2021)
Category: Optoelectronics
Received: Nov. 9, 2020
Accepted: Mar. 21, 2021
Published Online: Jun. 1, 2021
The Author Email: Frank Mehnke (frank.mehnke@ece.gatech.edu)