Analysis of High Temperature Current Transport Mechanism of &#946;-Ga<sub>2</sub>O<sub>3</sub> Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector

DU Tong; FU Junjie; WANG Zishi; DI Jing; TAO Chunlei; ZHANG Hezhi; ZHANG Qi; HU Xibing; LIANG Hongwei

doi:10.16553/j.cnki.issn1000-985x.2024.0263

Journal of Synthetic Crystals, Volume. 54, Issue 2, 319(2025)

Analysis of High Temperature Current Transport Mechanism of β-Ga₂O₃ Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector

DU Tong¹, FU Junjie¹, WANG Zishi¹, DI Jing¹, TAO Chunlei¹, ZHANG Hezhi^1,2、*, ZHANG Qi², HU Xibing², and LIANG Hongwei¹

Author Affiliations

¹School of Integrated Circuits, Dalian University of Technology, Dalian 116620, China

²Jiangsu XGL Optoelectronics Co., Ltd., Jiangsu 214192, China

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DU Tong, FU Junjie, WANG Zishi, DI Jing, TAO Chunlei, ZHANG Hezhi, ZHANG Qi, HU Xibing, LIANG Hongwei. Analysis of High Temperature Current Transport Mechanism of β-Ga₂O₃ Based Metal-Semiconductor-Metal Type Solar-Blind Ultraviolet Photodetector[J]. Journal of Synthetic Crystals, 2025, 54(2): 319

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Paper Information

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Received: Oct. 31, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: ZHANG Hezhi (hez.zhang@dlut.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0263

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology