Time-gated Raman spectroscopy (TGRS) has been proven to be one of the most effective methods for solving the interference of fluorescence on Raman signals. Since the birth of large and expensive laboratory equipment such as optical Kerr gates, significant progress has been made in fluorescence suppression technology. Today, better and more affordable small-scale equipment is available for use. These improvements are mainly due to advancements in spectral and electronic component production technology, which have lowered the complexity and cost of the equipment. The key component of time-gated Raman spectroscopy is precise time synchronization (in the picosecond range), i.e. synchronization between the pulsed laser excitation source and the sensitive and fast detection device. During the laser pulse period, the detector can collect Raman signals, while during the dead time of the detector, the longer delay time of fluorescence emission can be excluded. Due to its shorter measurement cycle, TG Raman spectroscopy also has the ability to resist interference from ambient light and thermal radiation. In recent years, research on ultra-sensitive and fast detectors has focused on gate-controlled and gain-type charge-coupled devices (ICCDs) or on CMOS single-photon avalanche diodes (SPADs) arrays, which are also suitable for TG Raman. Compared to gate-controlled CCDs, SPADs arrays have higher sensitivity and better time resolution, and do not require overcooling of the detector. This paper aims to review the technical development achievements of TG Raman technology from the early days to the present both at home and abroad, and to introduce the experimental results of studying nano-SnO2 grains and nails using TG Raman technology, as well as to briefly discuss the possible extended applications of TG technology.